Influence of Quantum Effects on Dielectric Relaxation in Functional Electrical and Electric Energy Elements Based on Proton Semiconductors and Dielectrics; Applied Sciences; Vol. 13, iss. 15

Influence of Quantum Effects on Dielectric Relaxation in Functional Electrical and Electric Energy Elements Based on Proton Semiconductors and Dielectrics; Applied Sciences; Vol. 13, iss. 15

Бібліографічні деталі
Parent link:Applied Sciences.— .— Basel: MDPI AG
Vol. 13, iss. 15.— 2023.— Article number 8755, 31 p.
Інші автори: Kalytka V. A. Valery, Baimukhanov Z. Zein, Neshina E. Elena, Mekhtiev A. Ali, Dunayev P. Pavel, Galtseva (Gal’tseva) O. V. Olga Valerievna, Senina Y. Yelena
Резюме:Title screen
Using the quasi-classical kinetic theory of dielectric relaxation, in addition to existing methods, fundamental mathematical expressions are built, which make it possible to more strictly consider the effects of the main charge carriers’ (protons’) tunneling on the numerical values of the molecular parameters (activation energy, equilibrium concentration) of protons in HBC. The formulas for calculating the statistically averaged non-stationary quantum transparency of a parabolic potential barrier for protons have been modernized by more stringent consideration of the effects of corrections caused by an external electric field. For the model of a double-symmetric potential well, a generalized nonlinear solution of the quasi-classical kinetic equation of dielectric relaxation in HBC was built
Текстовый файл
Мова:Англійська
Опубліковано: 2023
Предмети:
hydrogen-bonded crystals (HBC)
proton semiconductors and dielectrics (PSD)
quantum diffusion polarization
электронный ресурс
труды учёных ТПУ
Онлайн доступ:https://doi.org/10.3390/app13158755
Формат: Електронний ресурс Частина з книги
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=684971

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