Excitation of the giant dipole resonance by radiation of (110) channeled electrons in a Si crystal

Xehetasun bibliografikoak
Parent link:European Physical Journal A.— .— New York: Springer Science+Business Media LLC.
Vol. 61, iss. 12.— 2025.— Article number 276, 11 p.
Egile nagusia: Ashurko N. Nikita
Beste egile batzuk: Bogdanov O. V. Oleg Viktorovich, Dabagov S. B. Sultan Barasbievich
Gaia:Title screen
The channeling radiation spectrum for electrons in the sub-GeV to several GeV range exhibits a broad peak at photon energies reaching several tens of MeV. This property makes it suitable for inducing ( , n) photonuclear reactions in a subsequent target. For a given radiator thickness, the flux of channeling radiation can surpass that of bremsstrahlung by over an order of magnitude. This high flux is highly effective for studying photonuclear reactions within the giant dipole resonance region and for producing pulsed neutron beams. Detailed yield calculations for neutrons from targets of Au, Pb, U, Zn, and Si reveal a complex dependence on both the incident electron beam’s energy and its alignment with the crystal’s channeling planes
Текстовый файл
AM_Agreement
Argitaratua: 2025
Gaiak:
Sarrera elektronikoa:https://doi.org/10.1140/epja/s10050-025-01761-9
Formatua: Baliabide elektronikoa Liburu kapitulua
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=684123
Deskribapena
Gaia:Title screen
The channeling radiation spectrum for electrons in the sub-GeV to several GeV range exhibits a broad peak at photon energies reaching several tens of MeV. This property makes it suitable for inducing ( , n) photonuclear reactions in a subsequent target. For a given radiator thickness, the flux of channeling radiation can surpass that of bremsstrahlung by over an order of magnitude. This high flux is highly effective for studying photonuclear reactions within the giant dipole resonance region and for producing pulsed neutron beams. Detailed yield calculations for neutrons from targets of Au, Pb, U, Zn, and Si reveal a complex dependence on both the incident electron beam’s energy and its alignment with the crystal’s channeling planes
Текстовый файл
AM_Agreement
DOI:10.1140/epja/s10050-025-01761-9