Pulsed cathodoluminescence of BaFBr crystals irradiated by swift heavy ions
| Parent link: | Technobius Physics.— .— Astana: Technobius Vol. 3, iss. 1.— 2025.— Article number 0029, 7 p. |
|---|---|
| অন্যান্য লেখক: | , , , |
| সংক্ষিপ্ত: | Title screen This study investigates the influence of swift heavy ion irradiation on the pulsed cathodoluminescence properties of BaFBr crystals. The objective is to analyze how ion species and fluence affect exciton luminescence behavior under pulsed electron beam excitation. BaFBr crystals were irradiated with 147 MeV krypton and 227 MeV xenon ions at varying fluences, and their PCL spectra were recorded at room temperature. Time-resolved measurements revealed the presence of luminescence bands centered at 4.2 eV, attributed to self-trapped excitons. A comparative analysis of irradiated and unirradiated samples showed that ion irradiation led to notable modifications in the intensity and decay dynamics of the nanosecond and microsecond components of the emission. The fast component dominated at lower fluences, while higher fluences induced a shift toward slower decay processes, likely due to the accumulation of radiation-induced defects. The experimental results suggest that controlled ion irradiation can be used to tailor the luminescence characteristics of BaFBr crystals, with implications for improving materials used in digital imaging and radiation detection technologies Текстовый файл |
| প্রকাশিত: |
2025
|
| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | https://doi.org/10.54355/tbusphys/3.1.2025.0029 |
| বিন্যাস: | বৈদ্যুতিক গ্রন্থের অধ্যায় |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=684122 |
| সংক্ষিপ্ত: | Title screen This study investigates the influence of swift heavy ion irradiation on the pulsed cathodoluminescence properties of BaFBr crystals. The objective is to analyze how ion species and fluence affect exciton luminescence behavior under pulsed electron beam excitation. BaFBr crystals were irradiated with 147 MeV krypton and 227 MeV xenon ions at varying fluences, and their PCL spectra were recorded at room temperature. Time-resolved measurements revealed the presence of luminescence bands centered at 4.2 eV, attributed to self-trapped excitons. A comparative analysis of irradiated and unirradiated samples showed that ion irradiation led to notable modifications in the intensity and decay dynamics of the nanosecond and microsecond components of the emission. The fast component dominated at lower fluences, while higher fluences induced a shift toward slower decay processes, likely due to the accumulation of radiation-induced defects. The experimental results suggest that controlled ion irradiation can be used to tailor the luminescence characteristics of BaFBr crystals, with implications for improving materials used in digital imaging and radiation detection technologies Текстовый файл |
|---|---|
| ডিওআই: | 10.54355/tbusphys/3.1.2025.0029 |