Influence of short-pulsed Ion irradiation on optical and photoelectrical properties of thin gallium oxide films; Optical Materials: X; Vol. 25
| Parent link: | Optical Materials: X.— .— Amsterdam: Elsevier Science Publishing Company Inc. Vol. 25.— 2025.— Article number 100394, 9 p. |
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| Diğer Yazarlar: | , , , , , , , , |
| Özet: | Title screen In this work the influence of a short-pulsed ion irradiation with a high flux (∼5.5∙1019 cm−2s−1) on structure, optical and photo-electrical properties of gallium oxide thin films have been investigated. The films were produced by the radio-frequency magnetron sputtering method. A part of deposited films was annealed in the air environment (900 °C, 2 h) for synthesis of β-Ga2O3 phase. Obtained films were subjected to the short-pulsed ion irradiation (ion energy - up to 200 keV, pulse duration - 90 ns, current density on the target - up to 15 A/cm2). The influence of the annealing and the irradiation on spectral dependences of absorption, the bandgap width and the Urbach energy have been determined. It was found that irradiation leads to amorphization of crystalline β-Ga2O3 films and a significant change in optical characteristics. In addition, we measured the magnitude of surface dark and photoconductivity of the films. Also, the field and spectral dependences of the photosensitivity of the films were researched. As a result, it was established that short-pulsed irradiation improves the photoelectric properties of amorphous gallium oxide films. The reasons of it are discussed Текстовый файл AM_Agreement |
| Dil: | İngilizce |
| Baskı/Yayın Bilgisi: |
2025
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| Konular: | |
| Online Erişim: | https://doi.org/10.1016/j.omx.2024.100394 |
| Materyal Türü: | Elektronik Kitap Bölümü |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=681878 |
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| 200 | 1 | |a Influence of short-pulsed Ion irradiation on optical and photoelectrical properties of thin gallium oxide films |f Zhanymgul Koishybayeva, Fedor Konusov, Sergey Pavlov [et al.] | |
| 203 | |a Текст |b визуальный |c электронный | ||
| 283 | |a online_resource |2 RDAcarrier | ||
| 300 | |a Title screen | ||
| 320 | |a References: 55 tit | ||
| 330 | |a In this work the influence of a short-pulsed ion irradiation with a high flux (∼5.5∙1019 cm−2s−1) on structure, optical and photo-electrical properties of gallium oxide thin films have been investigated. The films were produced by the radio-frequency magnetron sputtering method. A part of deposited films was annealed in the air environment (900 °C, 2 h) for synthesis of β-Ga2O3 phase. Obtained films were subjected to the short-pulsed ion irradiation (ion energy - up to 200 keV, pulse duration - 90 ns, current density on the target - up to 15 A/cm2). The influence of the annealing and the irradiation on spectral dependences of absorption, the bandgap width and the Urbach energy have been determined. It was found that irradiation leads to amorphization of crystalline β-Ga2O3 films and a significant change in optical characteristics. In addition, we measured the magnitude of surface dark and photoconductivity of the films. Also, the field and spectral dependences of the photosensitivity of the films were researched. As a result, it was established that short-pulsed irradiation improves the photoelectric properties of amorphous gallium oxide films. The reasons of it are discussed | ||
| 336 | |a Текстовый файл | ||
| 371 | 0 | |a AM_Agreement | |
| 461 | 1 | |t Optical Materials: X |c Amsterdam |n Elsevier Science Publishing Company Inc. | |
| 463 | 1 | |t Vol. 25 |v Article number 100394, 9 p. |d 2025 | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a Gallium oxide | |
| 610 | 1 | |a Thin films | |
| 610 | 1 | |a Radiation resistance | |
| 610 | 1 | |a Magnetron sputtering | |
| 610 | 1 | |a Short-pulsed ion irradiation | |
| 610 | 1 | |a Radiation defects | |
| 610 | 1 | |a Optical properties | |
| 701 | 1 | |a Koishybayeva |b Zh. |g Zhanymgul | |
| 701 | 1 | |a Konusov |b F. V. |c physicist |c Lead Engineer of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1958- |g Fedor Valerievich |9 16491 | |
| 701 | 1 | |a Pavlov |b S. K. |c physicist |c Engineer of Tomsk Polytechnic University |f 1990- |g Sergey Konstantinovich |9 16723 | |
| 701 | 1 | |a Sidelev |b D. V. |c physicist |c Associate Professor of Tomsk Polytechnic University, Candidate of Technical Sciences |f 1991- |g Dmitry Vladimirovich |y Tomsk |9 17905 | |
| 701 | 1 | |a Nassyrbayev (Nasyrbaev) |b A. |c Specialist in the field of electric power engineering |c Research Engineer of Tomsk Polytechnic University |f 1998- |g Artur |9 22370 | |
| 701 | 1 | |a Cheshev |b D. L. |c Specialist in the field of material science |c Engineer of Tomsk Polytechnic University |f 2000- |g Dmitry Leonidovich |9 22924 | |
| 701 | 1 | |a Gadirov |b R. M. |g Ruslan Mukhamedzhanovich | |
| 701 | 1 | |a Tarbokov |b V. A. |c specialist in the field of material science |c Leading engineer of Tomsk Polytechnic University, Candidate of technical sciences |f 1969- |g Vladislav Aleksandrovich |9 21445 | |
| 701 | 1 | |a Akilbekov |b A. T. |g Abdirash Tasanovich | |
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