Modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 keV C+ ion beams

Modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 keV C+ ion beams

Bibliografiske detaljer
Parent link:	Optical Materials: X.— .— Amsterdam: Elsevier Science Publishing Company Inc. Vol. 25.— 2025.— Article number 100399, 8 p.
Andre forfattere:	Koishybayeva Zh. Zhanymgul, Konusov F. V. Fedor Valerievich, Pavlov S. K. Sergey Konstantinovich, Sidelev D. V. Dmitry Vladimirovich, Nassyrbayev (Nasyrbaev) A. Artur, Gadirov R. M. Ruslan Mukhamedzhanovich, Tarbokov V. A. Vladislav Aleksandrovich, Polisadova E. F. Elena Fyodorovna, Akilbekov A. T. Abdirash Tasanovich
Summary:	Title screen In this work the effect of an intense pulsed ion irradiation with a high flux ∼1020 cm−2s−1 on structure, optical and photo-electrical properties of gallium oxide thin films have been investigated. The films were produced by the radio-frequency magnetron sputtering method and had amorphous structure. A part of deposited films was annealed in the air environment (900 °C, 1 h) for synthesis of β-Ga2O3 phase. Obtained films were subjected to the intense pulsed ion irradiation (ion energy - up to 200 keV, pulse duration - 100 ns, current density on the target - up to 30 A/cm2, number of pulses - 3). The influence of irradiation on optical absorption and photoluminescence spectra, field and temperature dependencies of dark and photoconductivity were investigated. The probable nature of growth defects is discussed, and a scheme of electronic transitions that determine optical properties is proposed Текстовый файл AM_Agreement
Udgivet:	2025
Fag:	электронный ресурс труды учёных ТПУ Gallium oxide Thin films Magnetron sputtering Pulsed ion irradiation Photoconductivity Optical properties
Online adgang:	https://doi.org/10.1016/j.omx.2025.100399
Format:	Electronisk Book Chapter
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=681877

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