Modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 keV C+ ion beams; Optical Materials: X; Vol. 25
| Parent link: | Optical Materials: X.— .— Amsterdam: Elsevier Science Publishing Company Inc. Vol. 25.— 2025.— Article number 100399, 8 p. |
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| Altres autors: | , , , , , , , , |
| Sumari: | Title screen In this work the effect of an intense pulsed ion irradiation with a high flux ∼1020 cm−2s−1 on structure, optical and photo-electrical properties of gallium oxide thin films have been investigated. The films were produced by the radio-frequency magnetron sputtering method and had amorphous structure. A part of deposited films was annealed in the air environment (900 °C, 1 h) for synthesis of β-Ga2O3 phase. Obtained films were subjected to the intense pulsed ion irradiation (ion energy - up to 200 keV, pulse duration - 100 ns, current density on the target - up to 30 A/cm2, number of pulses - 3). The influence of irradiation on optical absorption and photoluminescence spectra, field and temperature dependencies of dark and photoconductivity were investigated. The probable nature of growth defects is discussed, and a scheme of electronic transitions that determine optical properties is proposed Текстовый файл AM_Agreement |
| Idioma: | anglès |
| Publicat: |
2025
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| Matèries: | |
| Accés en línia: | https://doi.org/10.1016/j.omx.2025.100399 |
| Format: | Electrònic Capítol de llibre |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=681877 |
MARC
| LEADER | 00000naa0a2200000 4500 | ||
|---|---|---|---|
| 001 | 681877 | ||
| 005 | 20260210071611.0 | ||
| 090 | |a 681877 | ||
| 100 | |a 20250925d2025 k||y0rusy50 ba | ||
| 101 | 0 | |a eng | |
| 102 | |a NL | ||
| 135 | |a drcn ---uucaa | ||
| 181 | 0 | |a i |b e | |
| 182 | 0 | |a b | |
| 183 | 0 | |a cr |2 RDAcarrier | |
| 200 | 1 | |a Modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 keV C+ ion beams |f Zhanymgul Koishybayeva, Fedor Konusov, Sergey Pavlov [et al.] | |
| 203 | |a Текст |b визуальный |c электронный | ||
| 283 | |a online_resource |2 RDAcarrier | ||
| 300 | |a Title screen | ||
| 320 | |a References: 38 tit | ||
| 330 | |a In this work the effect of an intense pulsed ion irradiation with a high flux ∼1020 cm−2s−1 on structure, optical and photo-electrical properties of gallium oxide thin films have been investigated. The films were produced by the radio-frequency magnetron sputtering method and had amorphous structure. A part of deposited films was annealed in the air environment (900 °C, 1 h) for synthesis of β-Ga2O3 phase. Obtained films were subjected to the intense pulsed ion irradiation (ion energy - up to 200 keV, pulse duration - 100 ns, current density on the target - up to 30 A/cm2, number of pulses - 3). The influence of irradiation on optical absorption and photoluminescence spectra, field and temperature dependencies of dark and photoconductivity were investigated. The probable nature of growth defects is discussed, and a scheme of electronic transitions that determine optical properties is proposed | ||
| 336 | |a Текстовый файл | ||
| 371 | 0 | |a AM_Agreement | |
| 461 | 1 | |t Optical Materials: X |c Amsterdam |n Elsevier Science Publishing Company Inc. | |
| 463 | 1 | |t Vol. 25 |v Article number 100399, 8 p. |d 2025 | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a Gallium oxide | |
| 610 | 1 | |a Thin films | |
| 610 | 1 | |a Magnetron sputtering | |
| 610 | 1 | |a Pulsed ion irradiation | |
| 610 | 1 | |a Photoconductivity | |
| 610 | 1 | |a Optical properties | |
| 701 | 1 | |a Koishybayeva |b Zh. |g Zhanymgul | |
| 701 | 1 | |a Konusov |b F. V. |c physicist |c Lead Engineer of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1958- |g Fedor Valerievich |9 16491 | |
| 701 | 1 | |a Pavlov |b S. K. |c physicist |c Engineer of Tomsk Polytechnic University |f 1990- |g Sergey Konstantinovich |9 16723 | |
| 701 | 1 | |a Sidelev |b D. V. |c physicist |c Associate Professor of Tomsk Polytechnic University, Candidate of Technical Sciences |f 1991- |g Dmitry Vladimirovich |y Tomsk |9 17905 | |
| 701 | 1 | |a Nassyrbayev (Nasyrbaev) |b A. |c Specialist in the field of electric power engineering |c Research Engineer of Tomsk Polytechnic University |f 1998- |g Artur |9 22370 | |
| 701 | 1 | |a Gadirov |b R. M. |g Ruslan Mukhamedzhanovich | |
| 701 | 1 | |a Tarbokov |b V. A. |c specialist in the field of material science |c Leading engineer of Tomsk Polytechnic University, Candidate of technical sciences |f 1969- |g Vladislav Aleksandrovich |9 21445 | |
| 701 | 1 | |a Polisadova |b E. F. |c specialist in the field of lighting engineering |c professor of Tomsk Polytechnic University, doctor of physical and mathematical sciences |f 1972- |g Elena Fyodorovna |9 17473 | |
| 701 | 1 | |a Akilbekov |b A. T. |g Abdirash Tasanovich | |
| 801 | 0 | |a RU |b 63413507 |c 20250925 | |
| 850 | |a 63413507 | ||
| 856 | 4 | |u https://doi.org/10.1016/j.omx.2025.100399 |z https://doi.org/10.1016/j.omx.2025.100399 | |
| 942 | |c CF | ||