Modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 keV C+ ion beams
| Parent link: | Optical Materials: X.— .— Amsterdam: Elsevier Science Publishing Company Inc. Vol. 25.— 2025.— Article number 100399, 8 p. |
|---|---|
| Övriga upphovsmän: | , , , , , , , , |
| Sammanfattning: | Title screen In this work the effect of an intense pulsed ion irradiation with a high flux ∼1020 cm−2s−1 on structure, optical and photo-electrical properties of gallium oxide thin films have been investigated. The films were produced by the radio-frequency magnetron sputtering method and had amorphous structure. A part of deposited films was annealed in the air environment (900 °C, 1 h) for synthesis of β-Ga2O3 phase. Obtained films were subjected to the intense pulsed ion irradiation (ion energy - up to 200 keV, pulse duration - 100 ns, current density on the target - up to 30 A/cm2, number of pulses - 3). The influence of irradiation on optical absorption and photoluminescence spectra, field and temperature dependencies of dark and photoconductivity were investigated. The probable nature of growth defects is discussed, and a scheme of electronic transitions that determine optical properties is proposed Текстовый файл AM_Agreement |
| Språk: | engelska |
| Publicerad: |
2025
|
| Ämnen: | |
| Länkar: | https://doi.org/10.1016/j.omx.2025.100399 |
| Materialtyp: | Elektronisk Bokavsnitt |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=681877 |
| Sammanfattning: | Title screen In this work the effect of an intense pulsed ion irradiation with a high flux ∼1020 cm−2s−1 on structure, optical and photo-electrical properties of gallium oxide thin films have been investigated. The films were produced by the radio-frequency magnetron sputtering method and had amorphous structure. A part of deposited films was annealed in the air environment (900 °C, 1 h) for synthesis of β-Ga2O3 phase. Obtained films were subjected to the intense pulsed ion irradiation (ion energy - up to 200 keV, pulse duration - 100 ns, current density on the target - up to 30 A/cm2, number of pulses - 3). The influence of irradiation on optical absorption and photoluminescence spectra, field and temperature dependencies of dark and photoconductivity were investigated. The probable nature of growth defects is discussed, and a scheme of electronic transitions that determine optical properties is proposed Текстовый файл AM_Agreement |
|---|---|
| DOI: | 10.1016/j.omx.2025.100399 |