Laser-induced p- and n-type graphene composites for flexible electronics
| Parent link: | Surfaces and Interfaces.— .— Amsterdam: Elsevier Science Publishing Company Inc. Vol. 68.— 2025.— Article number 106666, 8 p. |
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| מחברים אחרים: | , , , , , |
| סיכום: | Title screen Graphene-based technologies have rapidly developed in the last decades, evolving from theoretical concepts to multifunctional devices. However, controlling graphene’s electronic properties, e.g., type of conductivity or bandgap, is still in demand and critical to designing advanced flexible electronics. In this work, we demonstrate precise control over the semiconducting properties of reduced graphene oxide, enabling the fabrication of p- and n-type graphene composites via laser processing of graphene oxide (GO) and mildly oxidized graphene (MOG) on polymers. The control of graphene functionalization during the synthesis allowed the manufacturing of conductive composites with predictable conductivity type and sheet resistance below 35 Ohm sq-1. Our results also reveal the significant role of the substrate for laser processing, determining the conductivity type of the final composite. We demonstrate the applicability of laser-processed p-n junctions in flexible thermocouples with tunable sensitivity from 15 to 19 μV K-1. The p- and n-type composites were successfully integrated as channel materials for electrolyte-gated transistors (EGTs) with up to 150 μS transconductance. Notably, the EGTs demonstrate ambipolar behavior with reversible p- to n-transition during operation due to ion doping. These findings expand the capabilities of laser-processed graphene/polymer composites and, for the first time, demonstrate electrochemical doping of reduced graphene-based transistors within the water window and fabricate stable reduced graphene/polymer liquid-gated transistors with an n-type channel Текстовый файл AM_Agreement |
| שפה: | אנגלית |
| יצא לאור: |
2025
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| נושאים: | |
| גישה מקוונת: | https://doi.org/10.1016/j.surfin.2025.106666 |
| פורמט: | אלקטרוני Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=680471 |
MARC
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| 200 | 1 | |a Laser-induced p- and n-type graphene composites for flexible electronics |f Ilia Petrov, Dmitry Cheshev, Sergey Kaprov [et al.] | |
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| 320 | |a References: 39 tit | ||
| 330 | |a Graphene-based technologies have rapidly developed in the last decades, evolving from theoretical concepts to multifunctional devices. However, controlling graphene’s electronic properties, e.g., type of conductivity or bandgap, is still in demand and critical to designing advanced flexible electronics. In this work, we demonstrate precise control over the semiconducting properties of reduced graphene oxide, enabling the fabrication of p- and n-type graphene composites via laser processing of graphene oxide (GO) and mildly oxidized graphene (MOG) on polymers. The control of graphene functionalization during the synthesis allowed the manufacturing of conductive composites with predictable conductivity type and sheet resistance below 35 Ohm sq-1. Our results also reveal the significant role of the substrate for laser processing, determining the conductivity type of the final composite. We demonstrate the applicability of laser-processed p-n junctions in flexible thermocouples with tunable sensitivity from 15 to 19 μV K-1. The p- and n-type composites were successfully integrated as channel materials for electrolyte-gated transistors (EGTs) with up to 150 μS transconductance. Notably, the EGTs demonstrate ambipolar behavior with reversible p- to n-transition during operation due to ion doping. These findings expand the capabilities of laser-processed graphene/polymer composites and, for the first time, demonstrate electrochemical doping of reduced graphene-based transistors within the water window and fabricate stable reduced graphene/polymer liquid-gated transistors with an n-type channel | ||
| 336 | |a Текстовый файл | ||
| 371 | 0 | |a AM_Agreement | |
| 461 | 1 | |t Surfaces and Interfaces |c Amsterdam |n Elsevier Science Publishing Company Inc. | |
| 463 | 1 | |t Vol. 68 |v Article number 106666, 8 p. |d 2025 | |
| 610 | 1 | |a Reduced graphene | |
| 610 | 1 | |a Laser processing | |
| 610 | 1 | |a Conductivity type | |
| 610 | 1 | |a Composite | |
| 610 | 1 | |a Polymer | |
| 610 | 1 | |a Flexible electronics | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 701 | 1 | |a Petrov |b I. S. |c physicist, specialist in the field of nuclear technologies |c Junior Researcher of the Tomsk Polytechnic University |f 1994- |g Iljya Sergeevich |9 22501 | |
| 701 | 1 | |a Cheshev |b D. L. |c Specialist in the field of material science |c Engineer of Tomsk Polytechnic University |f 2000- |g Dmitry Leonidovich |9 22924 | |
| 701 | 1 | |a Kaprov |b S. A. |g Sergey Alekseevich | |
| 701 | 1 | |a Vasileva |b F. |g Fedora | |
| 701 | 1 | |a Rodriguez (Rodriges) Contreras |b R. D. |c Venezuelan physicist, doctor of science |c Professor of Tomsk Polytechnic University |f 1982- |g Raul David |9 21179 | |
| 701 | 1 | |a Sheremet |b E. S. |c physicist |c Professor of Tomsk Polytechnic University |f 1988- |g Evgeniya Sergeevna |9 21197 | |
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