Integration of Carbon Nanotubes in an HFCVD Diamond Synthesis Process in a Methane-Rich H2/CH4 Gas Mixture; Materials; Vol. 16, iss. 20

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Parent link:	Materials.— .— Basel: MDPI AG Vol. 16, iss. 20.— 2023.— Article number 6755, 12 p.
Інші автори:	Mitulinsky A. S. Aleksandr Sergeevich, Gaydaychuk A. V. Alexander Valerievich, Zenkin S. P. Sergey Petrovich, Meysner S. N. Stanislav Nikolaevich, Bulakh V. A. Vlada Aleksandrovna, Linnik S. A. Stepan Andreevich
Резюме:	Title screen In this work, we present experimental data on carbon nanotubes integration during diamond synthesis. Carbon nanotubes layers were preliminarily deposited on silicon and diamond substrates, after which the substrates were loaded into the HFCVD reactor for further growth of the diamond phase. The CVD process was held in an argon-free H2/CH4 working gas mixture without the use of a catalyst for carbon nanotubes growth. It is shown that in a wide range of studied working gas composition (CH4 concentration up to 28.6 vol.%) nanotubes etched from the substrate surface before the diamond growth process began Текстовый файл
Мова:	Англійська
Опубліковано:	2023
Предмети:	электронный ресурс труды учёных ТПУ HFCVD carbon nanotubes hydrogen etching
Онлайн доступ:	http://earchive.tpu.ru/handle/11683/132513 https://doi.org/10.3390/ma16206755
Формат:	Електронний ресурс Частина з книги
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=680249

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