Integration of Carbon Nanotubes in an HFCVD Diamond Synthesis Process in a Methane-Rich H2/CH4 Gas Mixture; Materials; Vol. 16, iss. 20
| Parent link: | Materials.— .— Basel: MDPI AG Vol. 16, iss. 20.— 2023.— Article number 6755, 12 p. |
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| Other Authors: | , , , , , |
| Summary: | Title screen In this work, we present experimental data on carbon nanotubes integration during diamond synthesis. Carbon nanotubes layers were preliminarily deposited on silicon and diamond substrates, after which the substrates were loaded into the HFCVD reactor for further growth of the diamond phase. The CVD process was held in an argon-free H2/CH4 working gas mixture without the use of a catalyst for carbon nanotubes growth. It is shown that in a wide range of studied working gas composition (CH4 concentration up to 28.6 vol.%) nanotubes etched from the substrate surface before the diamond growth process began Текстовый файл |
| Language: | English |
| Published: |
2023
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| Subjects: | |
| Online Access: | http://earchive.tpu.ru/handle/11683/132513 https://doi.org/10.3390/ma16206755 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=680249 |
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| 200 | 1 | |a Integration of Carbon Nanotubes in an HFCVD Diamond Synthesis Process in a Methane-Rich H2/CH4 Gas Mixture |f Alexander Mitulinsky, Alexander Gaydaychuk, Sergei Zenkin [et al.] | |
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| 330 | |a In this work, we present experimental data on carbon nanotubes integration during diamond synthesis. Carbon nanotubes layers were preliminarily deposited on silicon and diamond substrates, after which the substrates were loaded into the HFCVD reactor for further growth of the diamond phase. The CVD process was held in an argon-free H2/CH4 working gas mixture without the use of a catalyst for carbon nanotubes growth. It is shown that in a wide range of studied working gas composition (CH4 concentration up to 28.6 vol.%) nanotubes etched from the substrate surface before the diamond growth process began | ||
| 336 | |a Текстовый файл | ||
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| 463 | 1 | |t Vol. 16, iss. 20 |v Article number 6755, 12 p. |d 2023 | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a HFCVD | |
| 610 | 1 | |a carbon nanotubes | |
| 610 | 1 | |a hydrogen etching | |
| 701 | 1 | |a Mitulinsky |b A. S. |c electric power specialist |c technician of Tomsk Polytechnic University |f 1998- |g Aleksandr Sergeevich |9 22706 | |
| 701 | 1 | |a Gaydaychuk |b A. V. |c physicist |c Postgraduate, Engineer - Researcher of Tomsk Polytechnic University |f 1984- |g Alexander Valerievich |9 16724 | |
| 701 | 1 | |a Zenkin |b S. P. |c physicist |c Researcher of Tomsk Polytechnic University |f 1988- |g Sergey Petrovich |9 21447 | |
| 701 | 1 | |a Meysner |b S. N. |g Stanislav Nikolaevich | |
| 701 | 1 | |a Bulakh |b V. A. |c chemist |c Technician of Tomsk Polytechnic University |f 2002- |g Vlada Aleksandrovna |9 23056 | |
| 701 | 1 | |a Linnik |b S. A. |c physicist |c Engineer-Researcher of Tomsk Polytechnic University |f 1985- |g Stepan Andreevich |9 16725 | |
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