Silicon adsorption on the (111) surface of TiN, AlN and TaN compounds; AIP Conference Proceedings; Vol. 2899, iss. 1 : Physical Mesomechanics of Condensed Matter: Physical Principles of Multiscale Structure Formation and the Mechanisms of Nonlinear Behavior (MESO 2022)

Silicon adsorption on the (111) surface of TiN, AlN and TaN compounds; AIP Conference Proceedings; Vol. 2899, iss. 1 : Physical Mesomechanics of Condensed Matter: Physical Principles of Multiscale Structure Formation and the Mechanisms of Nonlinear Behavior (MESO 2022)

מידע ביבליוגרפי
Parent link:AIP Conference Proceedings.— .— New York: AIP Publishing.— 0094-243X
Vol. 2899, iss. 1 : Physical Mesomechanics of Condensed Matter: Physical Principles of Multiscale Structure Formation and the Mechanisms of Nonlinear Behavior (MESO 2022).— 2023.— Article number 020080, 6 p.
מחבר ראשי: Koroteev Yu. M. Yuri Mikhailovich
מחברים אחרים: Svyatkin L. A. Leonid Aleksandrovich, Ognev S. O. Sergey Olegovich
סיכום:Title screen
The interaction of a Si atom with the (111) surface of AlN, TiN, and TaN compounds has been studied using ab initio calculations. The most energetically favorable adsorption positions of Si atoms were found to be FCC and HCP holes. It was shown that silicon atoms have the highest binding energies on the AlN(111) and TiN(111) surfaces terminated by nitrogen atoms and on the TaN(111) surface terminated by tantalum. The valence electron density distribution has been studied to identify the type of Si atom bond with the (111) surface of AlN, TiN, and TaN compounds
Текстовый файл
AM_Agreement
שפה:אנגלית
יצא לאור: 2023
נושאים:
электронный ресурс
труды учёных ТПУ
גישה מקוונת:https://doi.org/10.1063/5.0162851
פורמט: אלקטרוני Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=680118

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