Silicon adsorption on the (111) surface of TiN, AlN and TaN compounds
| Parent link: | AIP Conference Proceedings.— .— New York: AIP Publishing.— 0094-243X |
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| Drugi avtorji: | , |
| Izvleček: | Title screen The interaction of a Si atom with the (111) surface of AlN, TiN, and TaN compounds has been studied using ab initio calculations. The most energetically favorable adsorption positions of Si atoms were found to be FCC and HCP holes. It was shown that silicon atoms have the highest binding energies on the AlN(111) and TiN(111) surfaces terminated by nitrogen atoms and on the TaN(111) surface terminated by tantalum. The valence electron density distribution has been studied to identify the type of Si atom bond with the (111) surface of AlN, TiN, and TaN compounds Текстовый файл AM_Agreement |
| Jezik: | angleščina |
| Izdano: |
2023
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| Teme: | |
| Online dostop: | https://doi.org/10.1063/5.0162851 |
| Format: | Elektronski Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=680118 |
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| 200 | 1 | |a Silicon adsorption on the (111) surface of TiN, AlN and TaN compounds |f Yury Koroteev, Leonid Svyatkin, Sergey Ognev | |
| 203 | |a Текст |c электронный |b визуальный | ||
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| 330 | |a The interaction of a Si atom with the (111) surface of AlN, TiN, and TaN compounds has been studied using ab initio calculations. The most energetically favorable adsorption positions of Si atoms were found to be FCC and HCP holes. It was shown that silicon atoms have the highest binding energies on the AlN(111) and TiN(111) surfaces terminated by nitrogen atoms and on the TaN(111) surface terminated by tantalum. The valence electron density distribution has been studied to identify the type of Si atom bond with the (111) surface of AlN, TiN, and TaN compounds | ||
| 336 | |a Текстовый файл | ||
| 371 | 0 | |a AM_Agreement | |
| 461 | 1 | |0 640270 |9 640270 |t AIP Conference Proceedings |c New York |n AIP Publishing |x 0094-243X | |
| 463 | 1 | |t Vol. 2899, iss. 1 : Physical Mesomechanics of Condensed Matter: Physical Principles of Multiscale Structure Formation and the Mechanisms of Nonlinear Behavior (MESO 2022) |o International Conference, 5-8 September 2022 Tomsk, Russia |v Article number 020080, 6 p. |d 2023 | |
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| 610 | 1 | |a труды учёных ТПУ | |
| 700 | 1 | |a Koroteev |b Yu. M. |c physicist |c programming specialist at Tomsk Polytechnic University |f 1959- |g Yuri Mikhailovich |9 14772 | |
| 701 | 1 | |a Svyatkin |b L. A. |c physicist |c Associate Professor of Tomsk Polytechnic University, Candidate of Physical and Mathematical Sciences |f 1988- |g Leonid Aleksandrovich |9 17747 | |
| 701 | 1 | |a Ognev |b S. O. |c Specialist in the field of nuclear technologies |c Engineer of Tomsk Polytechnic University |f 1999- |g Sergey Olegovich |9 22797 | |
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