Numerical Simulation of Temperature Field Dynamics in Single-Crystal Silicon at Repetitively-Pulsed High-Intensity Ion Implantation and Energy Impact on the Surface Layer; Russian Physics Journal; Vol. 65, iss. 11
| Parent link: | Russian Physics Journal=Известия вузов. Физика.— .— New York: Springer Science+Business Media LLC Vol. 65, iss. 11.— 2023.— P. 1862–1866 |
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| Andre forfattere: | , , , |
| Summary: | Title screen The surface layer modification of materials and coatings by ion beams is used in many fields of science and technology. The high-intensity implantation by ion beams with high power density and submillisecond duration, implies a significant pulsed heating of the irradiated surface layer, followed by its cooling due to the heat removal deep in the material thanks to its thermal conductivity and the implementation of repetitivelypulsed radiation-enhanced diffusion of atoms to depths exceeding the projective ion range. Based on the numerical simulation, the paper studies the temperature field dynamics in a silicon target at single-pulse and repetitively-pulsed submillisecond ion beams with 109 W/m2 pulsed power density. Temperature conditions are determined for the ion-implanted layer, which correspond to that of the radiation-induced diffusion of implanted elements, while the temperature in the matrix material does not lead to a deterioration of its microstructure and properties Текстовый файл AM_Agreement |
| Sprog: | engelsk |
| Udgivet: |
2023
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| Fag: | |
| Online adgang: | https://doi.org/10.1007/s11182-023-02843-1 Статья на русском языке |
| Format: | MixedMaterials Electronisk Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=680059 |
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| 200 | 1 | |a Numerical Simulation of Temperature Field Dynamics in Single-Crystal Silicon at Repetitively-Pulsed High-Intensity Ion Implantation and Energy Impact on the Surface Layer |d Численное моделирование динамики температурных полей в монокристаллическом кремнии при импульсно-периодической высокоинтенсивной ионной имплантации и энергетическом воздействии пучка на поверхность |f A. I. Ivanova, G. A. Bleykher, D. O. Vakhrushev, O. S. Korneva |z rus | |
| 283 | |a online_resource |2 RDAcarrier | ||
| 300 | |a Title screen | ||
| 320 | |a References: 7 tit | ||
| 330 | |a The surface layer modification of materials and coatings by ion beams is used in many fields of science and technology. The high-intensity implantation by ion beams with high power density and submillisecond duration, implies a significant pulsed heating of the irradiated surface layer, followed by its cooling due to the heat removal deep in the material thanks to its thermal conductivity and the implementation of repetitivelypulsed radiation-enhanced diffusion of atoms to depths exceeding the projective ion range. Based on the numerical simulation, the paper studies the temperature field dynamics in a silicon target at single-pulse and repetitively-pulsed submillisecond ion beams with 109 W/m2 pulsed power density. Temperature conditions are determined for the ion-implanted layer, which correspond to that of the radiation-induced diffusion of implanted elements, while the temperature in the matrix material does not lead to a deterioration of its microstructure and properties | ||
| 336 | |a Текстовый файл | ||
| 371 | 0 | |a AM_Agreement | |
| 461 | 1 | |t Russian Physics Journal |l Известия вузов. Физика |c New York |n Springer Science+Business Media LLC | |
| 463 | 1 | |t Vol. 65, iss. 11 |v P. 1862–1866 |d 2023 | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a Mathematical modeling | |
| 610 | 1 | |a Temperature gradient | |
| 610 | 1 | |a Low energy ion | |
| 610 | 1 | |a High-intensity implantation | |
| 610 | 1 | |a Silica | |
| 701 | 1 | |a Ivanova |b A. I. |c physicist |c Associate Scientist of Tomsk Polytechnic University |f 1987- |g Anna Ivanovna |9 20002 | |
| 701 | 1 | |a Bleykher (Bleicher) |b G. A. |c physicist |c Professor of Tomsk Polytechnic University, Doctor of Physical and Mathematical Sciences |f 1961- |g Galina Alekseevna |9 15657 | |
| 701 | 1 | |a Vakhrushev |b D. O. |c physicist |c engineer of Tomsk Polytechnic University |f 1998- |g Dimitry Olegovich |9 22696 | |
| 701 | 1 | |a Korneva |b O. S. |c physicist |c engineer of Tomsk Polytechnic University |f 1988- |g Olga Sergeevna |9 20156 | |
| 801 | 0 | |a RU |b 63413507 |c 20250506 |g RCR | |
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| 856 | 4 | |u https://doi.org/10.1007/s11182-023-02843-1 |z https://doi.org/10.1007/s11182-023-02843-1 | |
| 856 | 4 | |u https://www.elibrary.ru/item.asp?id=49813144 |z Статья на русском языке | |
| 942 | |c CF | ||