Effect of Annealing on the Defect Structure, Desorption Properties, and Structural-Phase State in Nanoscale Multilayer Zr/Nb Structures after Hydrogenation; Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques; Vol. 17

Detalhes bibliográficos
Parent link:Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques.— .— New York: Springer Science+Business Media LLC.
Vol. 17.— 2025.— P. 245-252
Outros Autores: Lomygin A. D. Anton Dmitrievich, Krotkevich D. G. Dmitry Georgievich, Laptev R. S. Roman Sergeevich, Wang Zhihuai, Sidorin A. A. Aleksey Anatoljevich, Orlov O. S. Oleg Sergeevich
Resumo:Title screen
The effect of annealing after hydrogenation on the defect structure, desorption properties, and structural-phase state of nanoscale multilayer Zr/Nb systems has been studied. Nanoscale multilayer structures based on Zr/Nb were fabricated using a magnetron sputtering system with an individual layer thickness of 50 nm. To analyze changes in the defect structure, one of the techniques of positron annihilation spectroscopy was used, Doppler broadening spectroscopy with a positron beam of variable energy for layer-by-layer positron implantation in Zr/Nb. The depth distribution of elements before and after hydrogenation was studied using glow discharge optical emission spectrometry. Analysis of changes in the structural-phase state was carried out using X-ray diffraction analysis. Thermal desorption spectroscopy was used to study the desorption of hydrogen from Zr/Nb, and the activation energy of hydrogen release was calculated by constructing Arrhenius plots. The forms of the Arrhenius plots differ from their usual form, which is associated with a nontypical distribution of hydrogen in Zr/Nb
Текстовый файл
AM_Agreement
Idioma:inglês
Publicado em: 2025
Assuntos:
Acesso em linha:https://doi.org/10.1134/S1027451024702136
Formato: Recurso Eletrônico Capítulo de Livro
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=679534

MARC

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200 1 |a Effect of Annealing on the Defect Structure, Desorption Properties, and Structural-Phase State in Nanoscale Multilayer Zr/Nb Structures after Hydrogenation  |f A. D. Lomygin, D. G. Krotkevich, R. S. Laptev [et al.] 
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330 |a The effect of annealing after hydrogenation on the defect structure, desorption properties, and structural-phase state of nanoscale multilayer Zr/Nb systems has been studied. Nanoscale multilayer structures based on Zr/Nb were fabricated using a magnetron sputtering system with an individual layer thickness of 50 nm. To analyze changes in the defect structure, one of the techniques of positron annihilation spectroscopy was used, Doppler broadening spectroscopy with a positron beam of variable energy for layer-by-layer positron implantation in Zr/Nb. The depth distribution of elements before and after hydrogenation was studied using glow discharge optical emission spectrometry. Analysis of changes in the structural-phase state was carried out using X-ray diffraction analysis. Thermal desorption spectroscopy was used to study the desorption of hydrogen from Zr/Nb, and the activation energy of hydrogen release was calculated by constructing Arrhenius plots. The forms of the Arrhenius plots differ from their usual form, which is associated with a nontypical distribution of hydrogen in Zr/Nb 
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461 1 |t Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques  |c New York  |n Springer Science+Business Media LLC. 
463 1 |t Vol. 17  |v P. 245-252  |d 2025 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
610 1 |a nanoscale multilayer structures 
610 1 |a incoherent interfaces 
610 1 |a hydrogenation 
610 1 |a gas reaction controller 
610 1 |a reduction annealing 
610 1 |a positron annihilation spectroscopy 
610 1 |a Doppler broadening spectroscopy 
610 1 |a glow discharge optical emission spectrometry 
610 1 |a X-ray diffraction analysis 
610 1 |a thermodesorption analysis 
701 1 |a Lomygin  |b A. D.  |c physicist  |c Head of Laboratory, Tomsk Polytechnic University  |f 1997-  |g Anton Dmitrievich  |9 21942 
701 1 |a Krotkevich  |b D. G.  |c physicist  |c engineer of Tomsk Polytechnic University  |f 1990-  |g Dmitry Georgievich  |9 22434 
701 1 |a Laptev  |b R. S.  |c physicist, specialist in the field of non-destructive testing  |c Associate Professor of Tomsk Polytechnic University, Doctor of Technical Sciences  |f 1987-  |g Roman Sergeevich  |y Tomsk  |9 15956 
701 0 |a Wang Zhihuai 
701 1 |a Sidorin  |b A. A.  |g Aleksey Anatoljevich 
701 1 |a Orlov  |b O. S.  |g Oleg Sergeevich 
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