Reliability Study of Metal-Oxide Semiconductors in Integrated Circuits
| Parent link: | Micromachines.— .— Basel: MDPI AG Vol. 15, iss. 5.— 2024.— Article number 561, 17 p. |
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| Autor corporatiu: | |
| Altres autors: | , , , , , , , |
| Sumari: | Title screen This paper is devoted to the study of CMOS IC parameter degradation during reliability testing. The paper presents a review of literature data on the issue of the reliability of semiconductor devices and integrated circuits and the types of failures leading to the degradation of IC parameters. It describes the tests carried out on the reliability of controlled parameters of integrated circuit TPS54332, such as quiescent current, quiescent current in standby mode, resistance of the open key, and instability of the set output voltage in the whole range of input voltages and in the whole range of load currents. The calculated values of activation energies and acceleration coefficients for different test temperature regimes are given. As a result of the work done, sample rejection tests have been carried out on the TPS54332 IC under study. Experimental fail-safe tests were carried out, with subsequent analysis of the chip samples by the controlled parameter quiescent current. On the basis of the obtained experimental values, the values of activation energy and acceleration coefficient at different temperature regimes were calculated. The dependencies of activation energy and acceleration coefficient on temperature were plotted, which show that activation energy linearly increases with increasing temperature, while the acceleration coefficient, on the contrary, decreases. It was also found that the value of the calculated activation energy of the chip is 0.1 eV less than the standard value of the activation energy Текстовый файл |
| Idioma: | anglès |
| Publicat: |
2024
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| Matèries: | |
| Accés en línia: | http://earchive.tpu.ru/handle/11683/132447 https://doi.org/10.3390/mi15050561 |
| Format: | Electrònic Capítol de llibre |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=676949 |
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| 200 | 1 | |a Reliability Study of Metal-Oxide Semiconductors in Integrated Circuits |f Boris V. Malozyomov, Nikita V. Martyushev, Natalia N. Bryukhanova [et al.] | |
| 203 | |a Текст |b визуальный |c электронный | ||
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| 300 | |a Title screen | ||
| 320 | |a References: 59 tit. | ||
| 330 | |a This paper is devoted to the study of CMOS IC parameter degradation during reliability testing. The paper presents a review of literature data on the issue of the reliability of semiconductor devices and integrated circuits and the types of failures leading to the degradation of IC parameters. It describes the tests carried out on the reliability of controlled parameters of integrated circuit TPS54332, such as quiescent current, quiescent current in standby mode, resistance of the open key, and instability of the set output voltage in the whole range of input voltages and in the whole range of load currents. The calculated values of activation energies and acceleration coefficients for different test temperature regimes are given. As a result of the work done, sample rejection tests have been carried out on the TPS54332 IC under study. Experimental fail-safe tests were carried out, with subsequent analysis of the chip samples by the controlled parameter quiescent current. On the basis of the obtained experimental values, the values of activation energy and acceleration coefficient at different temperature regimes were calculated. The dependencies of activation energy and acceleration coefficient on temperature were plotted, which show that activation energy linearly increases with increasing temperature, while the acceleration coefficient, on the contrary, decreases. It was also found that the value of the calculated activation energy of the chip is 0.1 eV less than the standard value of the activation energy | ||
| 336 | |a Текстовый файл | ||
| 461 | 1 | |t Micromachines |c Basel |n MDPI AG | |
| 463 | 1 | |t Vol. 15, iss. 5 |v Article number 561, 17 p. |d 2024 | |
| 610 | 1 | |a metal-oxide semiconductors | |
| 610 | 1 | |a microcircuit; reliability | |
| 610 | 1 | |a rejection tests | |
| 610 | 1 | |a temperature regime | |
| 610 | 1 | |a activation energy | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 701 | 1 | |a Malozemov |b B. V. |g Boris Vitaljevich | |
| 701 | 1 | |a Martyushev |b N. V. |c specialist in the field of material science |c Associate Professor of Tomsk Polytechnic University, Candidate of technical sciences |f 1981- |g Nikita Vladimirovich |9 16754 | |
| 701 | 1 | |a Bryukhanova |b N. N. |g Nataljya Nikolaevna | |
| 701 | 1 | |a Kondratjev |b V. V. |g Viktor Viktorovich | |
| 701 | 1 | |a Kononenko |b R, V. |g Roman Vladimirovich | |
| 701 | 1 | |a Pavlov |b P. P. |g Pavel Pavlovich | |
| 701 | 1 | |a Romanova |b V. V. |g Viktoriya Viktorovna | |
| 701 | 1 | |a Karlina |b Yu. I. |g Yuliya Igorevna | |
| 712 | 0 | 2 | |a National Research Tomsk Polytechnic University |c (2009- ) |9 27197 |4 570 |
| 801 | 0 | |a RU |b 63413507 |c 20241126 | |
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| 856 | 4 | |u http://earchive.tpu.ru/handle/11683/132447 |z http://earchive.tpu.ru/handle/11683/132447 | |
| 856 | 4 | |u https://doi.org/10.3390/mi15050561 |z https://doi.org/10.3390/mi15050561 | |
| 942 | |c CF | ||