High-Intensity Titanium Ion Implantation into Aluminum under Conditions of Repetitively-Pulsed Energy Impact of a Beam on the Surface

Dettagli Bibliografici
Parent link:Russian Physics Journal.— .— New York: Springer Science+Business Media LLC
Vol. 67, iss. 5.— 2024.— P. 558-564
Autore principale: Zaytsev D. D. Daniil Dmitrievich
Ente Autore: National Research Tomsk Polytechnic University (570)
Altri autori: Ivanova A. I. Anna Ivanovna, Gurulev A. V. Aleksandr Valerjevich
Riassunto:Title screen
The article presents the results of numerical modeling and experimental studies of the dynamics of temperature fields on the aluminum sample surface after a short repetitively-pulsed energy impact on the surface, and at the synergy of high-intensity titanium ion implantation into aluminum with a simultaneous repetitively-pulsed energy impact of the beam on the surface. The data on the accumulation and spatial distribution of implanted titanium in aluminum are presented. Using the samples heated by a repetitively-pulsed ion beam to the temperatures of 300°C and 500°C with an additional heating during each pulse to a temperature approaching that of melting, a possibility of ion doping of aluminum with titanium to the depths of up to 5 and 8 μm, respectively, is shown
Текстовый файл
AM_Agreement
Lingua:inglese
Pubblicazione: 2024
Soggetti:
Accesso online:https://doi.org/10.1007/s11182-024-03157-6
Natura: Elettronico Capitolo di libro
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=675397

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330 |a The article presents the results of numerical modeling and experimental studies of the dynamics of temperature fields on the aluminum sample surface after a short repetitively-pulsed energy impact on the surface, and at the synergy of high-intensity titanium ion implantation into aluminum with a simultaneous repetitively-pulsed energy impact of the beam on the surface. The data on the accumulation and spatial distribution of implanted titanium in aluminum are presented. Using the samples heated by a repetitively-pulsed ion beam to the temperatures of 300°C and 500°C with an additional heating during each pulse to a temperature approaching that of melting, a possibility of ion doping of aluminum with titanium to the depths of up to 5 and 8 μm, respectively, is shown 
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