Features of adsorption of silicon on TiN(111) compound in presence of substitution impurities Al and Ta: first principle calculations

Features of adsorption of silicon on TiN(111) compound in presence of substitution impurities Al and Ta: first principle calculations

Podrobná bibliografie
Parent link:	Перспективы развития фундаментальных наук=Prospects of Fundamental Sciences Development: сборник научных трудов XXI Международной конференции студентов, аспирантов и молодых ученых, г. Томск, 23-26 апреля 2024 г./ Национальный исследовательский Томский политехнический университет ; под ред. И. А. Курзиной [и др.].— .— Томск: Изд-во ТПУ Т. 1 : Физика.— 2024.— С. 386-388
Hlavní autor:	Ognev S. O. Sergey Olegovich
Korporativní autor:	Национальный исследовательский Томский политехнический университет (570)
Další autoři:	Svyatkin L. A. Leonid Aleksandrovich (727), Bolsunovskaya L. M. Ludmila Mihailovna
Shrnutí:	Заглавие с экрана We present the results of an ab initio study of silicon adsorption on the (111) surface of TiN with NaCl structure in the presence of substitutional impurities Al and Ta. All possible symmetric non-equivalent positions of the silicon atom on the (111) surface with titanium and nitrogen terminations were considered, and the binding energy of the silicon atom in these positions was calculated. The most energetically favorable positions for adsorption on the considered (111) surface were determined Текстовый файл
Jazyk:	angličtina
Vydáno:	2024
Témata:	труды учёных ТПУ электронный ресурс titanium nitride silicon protective wear-resistant coating adsorption of silicon
On-line přístup:	http://earchive.tpu.ru/handle/11683/80513
Médium:	Elektronický zdroj Kapitola
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=674926

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