Features of adsorption of silicon on TiN(111) compound in presence of substitution impurities Al and Ta: first principle calculations; Перспективы развития фундаментальных наук; Т. 1 : Физика
| Parent link: | Перспективы развития фундаментальных наук=Prospects of Fundamental Sciences Development: сборник научных трудов XXI Международной конференции студентов, аспирантов и молодых ученых, г. Томск, 23-26 апреля 2024 г./ Национальный исследовательский Томский политехнический университет ; под ред. И. А. Курзиной [и др.].— .— Томск: Изд-во ТПУ Т. 1 : Физика.— 2024.— С. 386-388 |
|---|---|
| Autor principal: | |
| Autor Corporativo: | |
| Otros Autores: | , |
| Sumario: | Заглавие с экрана We present the results of an ab initio study of silicon adsorption on the (111) surface of TiN with NaCl structure in the presence of substitutional impurities Al and Ta. All possible symmetric non-equivalent positions of the silicon atom on the (111) surface with titanium and nitrogen terminations were considered, and the binding energy of the silicon atom in these positions was calculated. The most energetically favorable positions for adsorption on the considered (111) surface were determined Текстовый файл |
| Lenguaje: | inglés |
| Publicado: |
2024
|
| Materias: | |
| Acceso en línea: | http://earchive.tpu.ru/handle/11683/80513 |
| Formato: | Electrónico Capítulo de libro |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=674926 |
MARC
| LEADER | 00000naa2a2200000 4500 | ||
|---|---|---|---|
| 001 | 674926 | ||
| 005 | 20260715071744.0 | ||
| 090 | |a 674926 | ||
| 100 | |a 20240924d2024 k||y0rusy50 ca | ||
| 101 | 1 | |a eng | |
| 102 | |a RU | ||
| 135 | |a drcn ---uucaa | ||
| 200 | 1 | |a Features of adsorption of silicon on TiN(111) compound in presence of substitution impurities Al and Ta: first principle calculations |f S. O. Ognev |g Scientific Supervisor L. A. Svyatkin, L. M. Bolsunovskaya ; Tomsk Polytechnic University | |
| 300 | |a Заглавие с экрана | ||
| 320 | |a References : 4 names | ||
| 330 | |a We present the results of an ab initio study of silicon adsorption on the (111) surface of TiN with NaCl structure in the presence of substitutional impurities Al and Ta. All possible symmetric non-equivalent positions of the silicon atom on the (111) surface with titanium and nitrogen terminations were considered, and the binding energy of the silicon atom in these positions was calculated. The most energetically favorable positions for adsorption on the considered (111) surface were determined | ||
| 336 | |a Текстовый файл | ||
| 461 | 1 | |0 674010 |t Перспективы развития фундаментальных наук |l Prospects of Fundamental Sciences Development |o сборник научных трудов XXI Международной конференции студентов, аспирантов и молодых ученых, г. Томск, 23-26 апреля 2024 г. |9 674010 |c Томск |n Изд-во ТПУ |f Национальный исследовательский Томский политехнический университет ; под ред. И. А. Курзиной [и др.] | |
| 463 | 1 | |0 674235 |t Т. 1 : Физика |v С. 386-388 |d 2024 |9 674235 |p 1 файл (66,9 MB, 392 с.) |u conference_tpu-2024-C21_V1.pdf |l Vol. 1 : Physics | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a titanium nitride | |
| 610 | 1 | |a silicon | |
| 610 | 1 | |a protective wear-resistant coating | |
| 610 | 1 | |a adsorption of silicon | |
| 700 | 1 | |a Ognev |b S. O. |c Specialist in the field of nuclear technologies |c Engineer of Tomsk Polytechnic University |f 1999- |g Sergey Olegovich |9 22797 | |
| 702 | 1 | |a Svyatkin |b L. A. |c physicist |c Associate Professor of Tomsk Polytechnic University, Candidate of Physical and Mathematical Sciences |f 1988- |g Leonid Aleksandrovich |4 727 | |
| 702 | 1 | |a Bolsunovskaya |b L. M. |c linguist |c Associate Professor of Tomsk Polytechnic University, Candidate of philological science |f 1966- |g Ludmila Mihailovna |4 727 | |
| 712 | 0 | 2 | |a Томский политехнический университет |c 1991- |7 ca |8 rus |4 570 |9 26305 |
| 801 | 0 | |a RU |b 63413507 |c 202409024 |g RCR | |
| 856 | 4 | |z http://earchive.tpu.ru/handle/11683/80513 |u http://earchive.tpu.ru/handle/11683/80513 | |
| 942 | |c CF | ||