Features of adsorption of silicon on TiN(111) compound in presence of substitution impurities Al and Ta: first principle calculations; Перспективы развития фундаментальных наук; Т. 1 : Физика
| Parent link: | Перспективы развития фундаментальных наук=Prospects of Fundamental Sciences Development: сборник научных трудов XXI Международной конференции студентов, аспирантов и молодых ученых, г. Томск, 23-26 апреля 2024 г./ Национальный исследовательский Томский политехнический университет ; под ред. И. А. Курзиной [и др.].— .— Томск: Изд-во ТПУ Т. 1 : Физика.— 2024.— С. 386-388 |
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| Tóm tắt: | Заглавие с экрана We present the results of an ab initio study of silicon adsorption on the (111) surface of TiN with NaCl structure in the presence of substitutional impurities Al and Ta. All possible symmetric non-equivalent positions of the silicon atom on the (111) surface with titanium and nitrogen terminations were considered, and the binding energy of the silicon atom in these positions was calculated. The most energetically favorable positions for adsorption on the considered (111) surface were determined Текстовый файл |
| Ngôn ngữ: | Tiếng Anh |
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2024
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| Truy cập trực tuyến: | http://earchive.tpu.ru/handle/11683/80513 |
| Định dạng: | Điện tử Chương của sách |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=674926 |
| Tóm tắt: | Заглавие с экрана We present the results of an ab initio study of silicon adsorption on the (111) surface of TiN with NaCl structure in the presence of substitutional impurities Al and Ta. All possible symmetric non-equivalent positions of the silicon atom on the (111) surface with titanium and nitrogen terminations were considered, and the binding energy of the silicon atom in these positions was calculated. The most energetically favorable positions for adsorption on the considered (111) surface were determined Текстовый файл |
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