Oxidation Performance of Nano-Layered (AlTiZrHfTa)Nx/SiNx Coatings Deposited by Reactive Magnetron Sputtering
| Parent link: | Materials.— .— Basel: MDPI AG Vol. 17, iss. 12.— 2024.— Article number 2799, 24 p. |
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| Müşterek Yazar: | |
| Diğer Yazarlar: | , , , , , , , , , , |
| Özet: | Title screen This work uses the direct current magnetron sputtering (DCMS) of equi-atomic (AlTiZrHfTa) and Si targets in dynamic sweep mode to deposit nano-layered (AlTiZrHfTa)Nx/SiNx refractory high-entropy coatings (RHECs). Transmission electron microscopy (TEM), field emission scanning electron microscopy (FESEM), thermogravimetric analysis (TGA), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) are used to investigate the effect of Si addition on the oxidation behavior of the nano-layered coatings. The Si-free nitride coating exhibits FCC structure and columnar morphology, while the Si-doped nitride coatings present a FCC (AlTiZrHfTa)N/amorphous-SiNx nano-layered architecture. The hardness decreases from 24.3 ± 1.0 GPa to 17.5 ± 1.0 GPa because of the nano-layered architecture, whilst Young’s modulus reduces from 188.0 ± 1.0 GPa to roughly 162.4 ± 1.0 GPa. By increasing the thickness of the SiNx nano-layer, kp values decrease significantly from 3.36 × 10−8 g2 cm−4 h−1 to 6.06 × 10−9 g2 cm−4 h−1. The activation energy increases from 90.8 kJ·mol−1 for (AlTiZrHfTa)Nx nitride coating to 126.52 kJ·mol−1 for the (AlTiZrHfTa)Nx/SiNx nano-layered coating. The formation of a FCC (AlTiZrHfTa)-Nx/a-SiNx nano-layered architecture results in the improvement of the resistance to oxidation at high temperature. Текстовый файл |
| Dil: | İngilizce |
| Baskı/Yayın Bilgisi: |
2024
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| Konular: | |
| Online Erişim: | https://doi.org/10.3390/ma17122799 |
| Materyal Türü: | Elektronik Kitap Bölümü |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=673582 |
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| 200 | 1 | |a Oxidation Performance of Nano-Layered (AlTiZrHfTa)Nx/SiNx Coatings Deposited by Reactive Magnetron Sputtering |f Djallel Eddine Touaibia, Sofiane Achache, Abdelhakim Bouissil [et al.] | |
| 203 | |a Текст |b визуальный |c электронный | ||
| 283 | |a online_resource |2 RDAcarrier | ||
| 300 | |a Title screen | ||
| 320 | |a References: 84 tit. | ||
| 330 | |a This work uses the direct current magnetron sputtering (DCMS) of equi-atomic (AlTiZrHfTa) and Si targets in dynamic sweep mode to deposit nano-layered (AlTiZrHfTa)Nx/SiNx refractory high-entropy coatings (RHECs). Transmission electron microscopy (TEM), field emission scanning electron microscopy (FESEM), thermogravimetric analysis (TGA), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) are used to investigate the effect of Si addition on the oxidation behavior of the nano-layered coatings. The Si-free nitride coating exhibits FCC structure and columnar morphology, while the Si-doped nitride coatings present a FCC (AlTiZrHfTa)N/amorphous-SiNx nano-layered architecture. The hardness decreases from 24.3 ± 1.0 GPa to 17.5 ± 1.0 GPa because of the nano-layered architecture, whilst Young’s modulus reduces from 188.0 ± 1.0 GPa to roughly 162.4 ± 1.0 GPa. By increasing the thickness of the SiNx nano-layer, kp values decrease significantly from 3.36 × 10−8 g2 cm−4 h−1 to 6.06 × 10−9 g2 cm−4 h−1. The activation energy increases from 90.8 kJ·mol−1 for (AlTiZrHfTa)Nx nitride coating to 126.52 kJ·mol−1 for the (AlTiZrHfTa)Nx/SiNx nano-layered coating. The formation of a FCC (AlTiZrHfTa)-Nx/a-SiNx nano-layered architecture results in the improvement of the resistance to oxidation at high temperature. | ||
| 336 | |a Текстовый файл | ||
| 461 | 1 | |t Materials |n MDPI AG |c Basel | |
| 463 | 1 | |t Vol. 17, iss. 12 |v Article number 2799, 24 p. |d 2024 | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a high-entropy alloys | |
| 610 | 1 | |a coatings | |
| 610 | 1 | |a magnetron sputtering | |
| 610 | 1 | |a (AlTiZrHfTa)/SiNx | |
| 610 | 1 | |a oxidation | |
| 610 | 1 | |a nano-layered | |
| 701 | 1 | |a Touaibia |b D. E. |g Djallel Eddine | |
| 701 | 1 | |a Achache |b S. |g Sofiane | |
| 701 | 1 | |a Bouissil |b A. |g Abdelhakim | |
| 701 | 1 | |a Parent |b F. |g Fabrice | |
| 701 | 1 | |a Ghanbaja |b J. |g Jaafar | |
| 701 | 1 | |a Gorbunova |b A. |c chemical engineer |c engineer of Tomsk Polytechnic University |f 1998- |g Alina |9 22427 | |
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| 701 | 1 | |a Chehimi |b M. |g Mohamed | |
| 701 | 1 | |a Schuster |b F. |g Frederic | |
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| 701 | 1 | |a El |b G. M. |g Garah Mohamed | |
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