Origin of improved sensitivity of nanocrystalline InVO4 to NO2; Sensors and Actuators B: Chemical; Vol. 417

Λεπτομέρειες βιβλιογραφικής εγγραφής
Parent link:Sensors and Actuators B: Chemical.— .— Amsterdam: Elsevier Science Publishing Company Inc.
Vol. 417.— 2024.— Article number 136054, 9 p.
Συγγραφή απο Οργανισμό/Αρχή: National Research Tomsk Polytechnic University (570)
Άλλοι συγγραφείς: Mozharov Ya. Yaroslav, Platonov V. Vadim, Stolbov D. Dmitrii, Gorbunova A. Alina, Marikutsa A. Artem
Περίληψη:Title screen
Metal vanadates are attracting an increasing interest as photocatalysts, photovoltaics, electrolytes and sensors. Mixed-metal oxide semiconductors are promising materials for gas sensors. Indium vanadate InVO4 is derivative from indium and vanadium(V) oxides, which are well known sensing materials. However, the sensing behavior, active sites and sensing mechanism of InVO4 were not studied. In this work, InVO4 nanoparticles are synthesized hydrothermally, and In2O3 and V2O5 are obtained as reference materials. Surface acidity and surface oxygen species are determined by temperature-programmed techniques with probe molecules, XPS and FTIR. Gas sensitivity of the materials to noxious inorganic and volatile organic compounds is investigated. InVO4 demonstrates superior sensitivity to NO2 at moderate temperature 150 °C with good stability at 0–60 % relative humidity (at 27 °C). Using in situ infrared (DRIFT) spectroscopy, it is shown that NO2 was adsorbed on InVO4 in different forms, including nitrosyl species. It enables deep NO2 reduction at the surface of InVO4, in addition to the reaction of nitrates and nitrites formation observed on In2O3. Based on the results of temperature programmed reduction, the origin of higher surface reactivity and sensitivity to NO2 is deduced to be a larger number of oxygen vacancies in InVO4, in comparison to simple oxides
Текстовый файл
AM_Agreement
Γλώσσα:Αγγλικά
Έκδοση: 2024
Θέματα:
Διαθέσιμο Online:https://doi.org/10.1016/j.snb.2024.136054
Μορφή: Ηλεκτρονική πηγή Κεφάλαιο βιβλίου
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=673399

MARC

LEADER 00000naa0a2200000 4500
001 673399
005 20240626105530.0
090 |a 673399 
100 |a 20240626d2024 k||y0rusy50 ba 
101 0 |a eng 
102 |a NL 
135 |a drcn ---uucaa 
181 0 |a i   |b  e  
182 0 |a b 
183 0 |a cr  |2 RDAcarrier 
200 1 |a Origin of improved sensitivity of nanocrystalline InVO4 to NO2  |f Ya. Mozharov, V. Platonov, D. Stolbov [et al.] 
203 |a Текст  |b визуальный  |c электронный 
283 |a online_resource  |2 RDAcarrier 
300 |a Title screen 
320 |a References: 46 tit. 
330 |a Metal vanadates are attracting an increasing interest as photocatalysts, photovoltaics, electrolytes and sensors. Mixed-metal oxide semiconductors are promising materials for gas sensors. Indium vanadate InVO4 is derivative from indium and vanadium(V) oxides, which are well known sensing materials. However, the sensing behavior, active sites and sensing mechanism of InVO4 were not studied. In this work, InVO4 nanoparticles are synthesized hydrothermally, and In2O3 and V2O5 are obtained as reference materials. Surface acidity and surface oxygen species are determined by temperature-programmed techniques with probe molecules, XPS and FTIR. Gas sensitivity of the materials to noxious inorganic and volatile organic compounds is investigated. InVO4 demonstrates superior sensitivity to NO2 at moderate temperature 150 °C with good stability at 0–60 % relative humidity (at 27 °C). Using in situ infrared (DRIFT) spectroscopy, it is shown that NO2 was adsorbed on InVO4 in different forms, including nitrosyl species. It enables deep NO2 reduction at the surface of InVO4, in addition to the reaction of nitrates and nitrites formation observed on In2O3. Based on the results of temperature programmed reduction, the origin of higher surface reactivity and sensitivity to NO2 is deduced to be a larger number of oxygen vacancies in InVO4, in comparison to simple oxides 
336 |a Текстовый файл 
371 0 |a AM_Agreement 
461 1 |t Sensors and Actuators B: Chemical  |c Amsterdam  |n Elsevier Science Publishing Company Inc. 
463 1 |t Vol. 417  |v Article number 136054, 9 p.  |d 2024 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
610 1 |a indium vanadate 
610 1 |a gas sensor 
610 1 |a nitrogen dioxide 
610 1 |a DRIFT spectroscopy 
610 1 |a sensing mechanism 
701 1 |a Mozharov  |b Ya.  |g Yaroslav 
701 1 |a Platonov   |b V.  |g Vadim 
701 1 |a Stolbov  |b D.  |g Dmitrii 
701 1 |a Gorbunova  |b A.  |c chemical engineer  |c engineer of Tomsk Polytechnic University  |f 1998-  |g Alina  |9 22427 
701 1 |a Marikutsa  |b A.  |g Artem 
712 0 2 |a National Research Tomsk Polytechnic University  |c (2009- )  |9 27197  |4 570 
801 0 |a RU  |b 63413507  |c 20240626 
850 |a 63413507 
856 4 |u https://doi.org/10.1016/j.snb.2024.136054  |z https://doi.org/10.1016/j.snb.2024.136054 
942 |c CR