Luminescence Control of Led Heterostructures Grown by Method of Metalorganic Vapor Phase Epitaxy on Sapphire; Russian Physics Journal; Vol. 65, iss. 11
| Parent link: | Russian Physics Journal Vol. 65, iss. 11.— 2023.— [P. 1875-1880] |
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| Yhteisötekijät: | , |
| Muut tekijät: | , |
| Yhteenveto: | Title screen The paper presents the results of spectral and kinetic characteristics of pulse cathode- and photoluminescence of AlGaN/GaN and InGaN/GaN LED heterostructures grown on sapphire by metalorganic vapor phase epitaxy. The effect of high current electron beam energy density on the spectral and amplitude characteristics of luminescence spectra of heterostructures is studied. The spatial distribution of fluorescence characteristics on the wafer surface was studied. It is found that in some InGaN/GaN heterostructures, a shift of the maximum of stimulated cathodoluminescence spectra, measured at different points of the sample, is observed. This result is explained by variations in the composition and thickness of the quantum dimensional active region caused by nonideality of the wafer growth process. Режим доступа: по договору с организацией-держателем ресурса |
| Kieli: | englanti |
| Julkaistu: |
2023
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| Aiheet: | |
| Linkit: | https://doi.org/10.1007/s11182-023-02845-z |
| Aineistotyyppi: | Elektroninen Kirjan osa |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=669430 |
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| 200 | 1 | |a Luminescence Control of Led Heterostructures Grown by Method of Metalorganic Vapor Phase Epitaxy on Sapphire |f Li Zixuan, L. V. Vorobyova, V. I. Oleshko | |
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| 300 | |a Title screen | ||
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| 330 | |a The paper presents the results of spectral and kinetic characteristics of pulse cathode- and photoluminescence of AlGaN/GaN and InGaN/GaN LED heterostructures grown on sapphire by metalorganic vapor phase epitaxy. The effect of high current electron beam energy density on the spectral and amplitude characteristics of luminescence spectra of heterostructures is studied. The spatial distribution of fluorescence characteristics on the wafer surface was studied. It is found that in some InGaN/GaN heterostructures, a shift of the maximum of stimulated cathodoluminescence spectra, measured at different points of the sample, is observed. This result is explained by variations in the composition and thickness of the quantum dimensional active region caused by nonideality of the wafer growth process. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Russian Physics Journal | ||
| 463 | |t Vol. 65, iss. 11 |v [P. 1875-1880] |d 2023 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a LED | |
| 610 | 1 | |a heterostructure | |
| 610 | 1 | |a superlattice | |
| 610 | 1 | |a cathode- and photoluminescence | |
| 700 | 0 | |a Li Zixuan | |
| 701 | 1 | |a Vorobyova |b L. V. |c linguist |c associate Professor of Tomsk Polytechnic University, candidate of philological Sciences |f 1979- |g Lyudmila Vladimirovna |3 (RuTPU)RU\TPU\pers\36255 |9 19331 | |
| 701 | 1 | |a Oleshko |b V. I. |c specialist in the field of lightning engineering |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1948- |g Vladimir Ivanovich |3 (RuTPU)RU\TPU\pers\33783 |9 17381 | |
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