Effects of annealing in vacuum on the microstructure of silicon-containing calcium phosphate films deposited on a ZrNb alloy by radio-frequency magnetron sputtering
| Parent link: | Vacuum Vol. 212.— 2023.— [112028, 11 p.] |
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| Corporate Author: | |
| Other Authors: | , , , , , , |
| Summary: | Title screen Coatings were deposited on the surface of a ZrNb alloy by radio-frequency magnetron sputtering using targets consisting of either pure crystalline hydroxyapatite (HA) or silicon-containing HA (Si-HA). The coated ZrNb samples were heated in a vacuum furnace at a pressure of 5 ? 10?5 Torr and temperature 700 °C for 2 h. Precursor powders of silicate-substituted HA [Ca10(PO4)6?x(SiO4)x(OH)2?x, x = 0, 0.5, or 1.72] were used to fabricate the targets for sputtering. The aim of this study was to analyze the effect of Si addition to HA on crystallization behavior and structure of the resulting films using transmission electron microscopy and electron diffraction patterns of selected sites. The average thickness of the films was in the range of 175–345 nm. The Si substitution in HA played a major role in the mechanisms of coating formation and crystallization behavior, which influenced the structure and crystallinity of the layers deposited by radio-frequency magnetron sputtering. Moreover, the results indicate that surface-induced crystallization of the deposited thin films is more pronounced than internal crystallization. A possible mechanism underlying the observed decrease in the crystallization rate with the increasing silicate content in the HA-based films is discussed. Режим доступа: по договору с организацией-держателем ресурса |
| Language: | English |
| Published: |
2023
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| Subjects: | |
| Online Access: | https://doi.org/10.1016/j.vacuum.2023.112028 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=669362 |
MARC
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| 200 | 1 | |a Effects of annealing in vacuum on the microstructure of silicon-containing calcium phosphate films deposited on a ZrNb alloy by radio-frequency magnetron sputtering |f M. A. Surmeneva, K. A. Prosolov, I. Glukhov [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 65 tit.] | ||
| 330 | |a Coatings were deposited on the surface of a ZrNb alloy by radio-frequency magnetron sputtering using targets consisting of either pure crystalline hydroxyapatite (HA) or silicon-containing HA (Si-HA). The coated ZrNb samples were heated in a vacuum furnace at a pressure of 5 ? 10?5 Torr and temperature 700 °C for 2 h. Precursor powders of silicate-substituted HA [Ca10(PO4)6?x(SiO4)x(OH)2?x, x = 0, 0.5, or 1.72] were used to fabricate the targets for sputtering. The aim of this study was to analyze the effect of Si addition to HA on crystallization behavior and structure of the resulting films using transmission electron microscopy and electron diffraction patterns of selected sites. The average thickness of the films was in the range of 175–345 nm. The Si substitution in HA played a major role in the mechanisms of coating formation and crystallization behavior, which influenced the structure and crystallinity of the layers deposited by radio-frequency magnetron sputtering. Moreover, the results indicate that surface-induced crystallization of the deposited thin films is more pronounced than internal crystallization. A possible mechanism underlying the observed decrease in the crystallization rate with the increasing silicate content in the HA-based films is discussed. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Vacuum | ||
| 463 | |t Vol. 212 |v [112028, 11 p.] |d 2023 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a silicon-containing hydroxyapatite | |
| 610 | 1 | |a radio-frequency magnetron sputtering | |
| 610 | 1 | |a coatingZrNb alloy | |
| 610 | 1 | |a гидроксиапатиты | |
| 610 | 1 | |a магнетронное напыление | |
| 701 | 1 | |a Surmeneva |b M. A. |c specialist in the field of material science |c engineer-researcher of Tomsk Polytechnic University, Associate Scientist |f 1984- |g Maria Alexandrovna |3 (RuTPU)RU\TPU\pers\31894 |9 15966 | |
| 701 | 1 | |a Prosolov |b K. A. |c Physicist |c Junior research fellow of Tomsk Polytechnic University |f 1991- |g Konstantin Alexandrovich |3 (RuTPU)RU\TPU\pers\47153 | |
| 701 | 1 | |a Glukhov |b I. |g Ivan | |
| 701 | 1 | |a Grubova |b I. Yu. |c physicist |c engineer-researcher of Tomsk Polytechnic Universit |f 1989- |g Irina Yurievna |3 (RuTPU)RU\TPU\pers\32674 |9 16573 | |
| 701 | 1 | |a Botvin |b V. V. |c chemist |c Senior Researcher of Tomsk Polytechnic University, Candidate of chemical sciences |f 1991- |g Vladimir Viktorovich |3 (RuTPU)RU\TPU\pers\47211 | |
| 701 | 1 | |a Surmenev |b R. A. |c physicist |c Associate Professor of Tomsk Polytechnic University, Senior researcher, Candidate of physical and mathematical sciences |f 1982- |g Roman Anatolievich |3 (RuTPU)RU\TPU\pers\31885 |9 15957 | |
| 701 | 1 | |a Sharkeev |b Yu. P. |c physicist |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1950- |g Yury Petrovich |3 (RuTPU)RU\TPU\pers\32228 |9 16228 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Исследовательская школа химических и биомедицинских технологий |c (2017- ) |3 (RuTPU)RU\TPU\col\23537 |
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