Study on the formation mechanism of oxide film of pure titanium during the cutting process; Materials Today Communications; Vol. 34
| Parent link: | Materials Today Communications Vol. 34.— 2023.— [105333, 7 p.] |
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| מחבר תאגידי: | |
| מחברים אחרים: | , , , , , , , |
| סיכום: | Title screen The industrial pure titanium (TA2) can be oxidized to produce the dense oxide film acted by the effect of thermal-mechanical coupling on the machined surface during the cutting process, which influences its mechanical properties. The characteristics of oxide film were investigated by a single factor cutting test. The phase analysis of the oxide film was carried out. The topography of the oxide film was observed. The formation mechanism of oxide film was studied by the first-principles. The oxide film is uneven, which its roughness increases with the increase of feed rate. The oxide film is mainly composed of TiO2, and the intensity of the TiO2 diffraction peak increases with the increase of feed rate, that is, the amount of TiO2 also increases gradually. When TA2 is oxidized at high temperature, O atoms are adsorbed by Ti atoms to the machined surface to form the corresponding O-Ti covalent bond. The bonding ability between O atoms and Ti atoms is gradually weakened from the machined surface to the inside of the matrix. Режим доступа: по договору с организацией-держателем ресурса |
| שפה: | אנגלית |
| יצא לאור: |
2023
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| נושאים: | |
| גישה מקוונת: | https://doi.org/10.1016/j.mtcomm.2023.105333 |
| פורמט: | MixedMaterials אלקטרוני Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=668817 |
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| 200 | 1 | |a Study on the formation mechanism of oxide film of pure titanium during the cutting process |f Li Jinquan, Cao Ning, R. S. Laptev [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 21 tit.] | ||
| 330 | |a The industrial pure titanium (TA2) can be oxidized to produce the dense oxide film acted by the effect of thermal-mechanical coupling on the machined surface during the cutting process, which influences its mechanical properties. The characteristics of oxide film were investigated by a single factor cutting test. The phase analysis of the oxide film was carried out. The topography of the oxide film was observed. The formation mechanism of oxide film was studied by the first-principles. The oxide film is uneven, which its roughness increases with the increase of feed rate. The oxide film is mainly composed of TiO2, and the intensity of the TiO2 diffraction peak increases with the increase of feed rate, that is, the amount of TiO2 also increases gradually. When TA2 is oxidized at high temperature, O atoms are adsorbed by Ti atoms to the machined surface to form the corresponding O-Ti covalent bond. The bonding ability between O atoms and Ti atoms is gradually weakened from the machined surface to the inside of the matrix. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Materials Today Communications | ||
| 463 | |t Vol. 34 |v [105333, 7 p.] |d 2023 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a titanium | |
| 610 | 1 | |a oxide film | |
| 610 | 1 | |a high-speed cutting | |
| 610 | 1 | |a first-principles | |
| 610 | 1 | |a титан | |
| 610 | 1 | |a оксидные пленки | |
| 610 | 1 | |a высокоскоростная резка | |
| 701 | 0 | |a Li Jinquan | |
| 701 | 0 | |a Cao Ning | |
| 701 | 1 | |a Laptev |b R. S. |c physicist, specialist in the field of non-destructive testing |c Associate Professor of Tomsk Polytechnic University, Doctor of Technical Sciences |f 1987- |g Roman Sergeevich |y Tomsk |3 (RuTPU)RU\TPU\pers\31884 |9 15956 | |
| 701 | 0 | |a Shen Haolun | |
| 701 | 1 | |a Kuznetsov |b P. V. |c physicist |c Associate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1952- |g Pavel Viktorovich |3 (RuTPU)RU\TPU\pers\34499 |9 17882 | |
| 701 | 1 | |a Medich |b Zh. |g Zharko | |
| 701 | 1 | |a Lomygin |b A. D. |c physicist |c Head of Laboratory, Tomsk Polytechnic University |f 1997- |g Anton Dmitrievich |3 (RuTPU)RU\TPU\pers\45578 |9 21942 | |
| 701 | 0 | |a Cui Jian | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа ядерных технологий |b Отделение экспериментальной физики |3 (RuTPU)RU\TPU\col\23549 |
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