Effect of the Content of Silicon on the Optical Properties of Al-Si-N Coatings Irradiated with Carbon Ions in the Short-Pulse Implantation Mode; Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques; Vol. 16, iss. 5
| Parent link: | Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques Vol. 16, iss. 5.— 2022.— [P. 702-711] |
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| Співавтори: | , |
| Інші автори: | , , , , , |
| Резюме: | Title screen The effect of short-pulse irradiation with 200-keV carbon ions on the optical and electrical properties of aluminum-nitride films and Al–Si–N coatings with variable atomic composition deposited by reactive magnetron sputtering on a silicon substrate is investigated. Absorption and luminescence centers are associated with growth and radiation-induced defects in nitrides and their simplest complexes. A change in the properties during irradiation occurs due to the accumulation of radiation defects and their association into complexes. Ion irradiation is accompanied by intense radiation and the thermal annealing of unstable defects. The dose dependences of the coating characteristics indicate their high radiation resistance, which are slightly inferior to coatings on steel substrates. The radiation resistance of the coatings is due to the limiting effect of growth defects on defect formation, the wide band gap of nitrides and the interaction of defects. Режим доступа: по договору с организацией-держателем ресурса |
| Мова: | Англійська |
| Опубліковано: |
2022
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| Предмети: | |
| Онлайн доступ: | https://doi.org/10.1134/S1027451022050081 |
| Формат: | Електронний ресурс Частина з книги |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=668661 |
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| 200 | 1 | |a Effect of the Content of Silicon on the Optical Properties of Al-Si-N Coatings Irradiated with Carbon Ions in the Short-Pulse Implantation Mode |f F. V. Konusov, S. K. Pavlov, A. L. Lauk [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 30 tit.] | ||
| 330 | |a The effect of short-pulse irradiation with 200-keV carbon ions on the optical and electrical properties of aluminum-nitride films and Al–Si–N coatings with variable atomic composition deposited by reactive magnetron sputtering on a silicon substrate is investigated. Absorption and luminescence centers are associated with growth and radiation-induced defects in nitrides and their simplest complexes. A change in the properties during irradiation occurs due to the accumulation of radiation defects and their association into complexes. Ion irradiation is accompanied by intense radiation and the thermal annealing of unstable defects. The dose dependences of the coating characteristics indicate their high radiation resistance, which are slightly inferior to coatings on steel substrates. The radiation resistance of the coatings is due to the limiting effect of growth defects on defect formation, the wide band gap of nitrides and the interaction of defects. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques | ||
| 463 | |t Vol. 16, iss. 5 |v [P. 702-711] |d 2022 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a aluminum nitride | |
| 610 | 1 | |a coatings | |
| 610 | 1 | |a growth defects | |
| 610 | 1 | |a irradiation | |
| 610 | 1 | |a radiation resistance | |
| 610 | 1 | |a radiation-induced defects | |
| 610 | 1 | |a absorption coefficient | |
| 610 | 1 | |a interband absorption | |
| 610 | 1 | |a band gap | |
| 610 | 1 | |a localized states | |
| 610 | 1 | |a нитрид алюминия | |
| 610 | 1 | |a покрытия | |
| 610 | 1 | |a дефекты | |
| 610 | 1 | |a облучение | |
| 610 | 1 | |a радиационная стойкость | |
| 610 | 1 | |a радиационные дефекты | |
| 610 | 1 | |a запрещенные зоны | |
| 610 | 1 | |a локализованные состояния | |
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| 701 | 1 | |a Pavlov |b S. K. |c physicist |c Engineer of Tomsk Polytechnic University |f 1990- |g Sergey Konstantinovich |3 (RuTPU)RU\TPU\pers\32875 |9 16723 | |
| 701 | 1 | |a Lauk |b A. L. |c Physicist |c Leading engineer of Tomsk Polytechnic University |f 1957- |g Aleksandr Lukyanovich |3 (RuTPU)RU\TPU\pers\37675 |9 20480 | |
| 701 | 1 | |a Tarbokov |b V. A. |c specialist in the field of material science |c Leading engineer of Tomsk Polytechnic University, Candidate of technical sciences |f 1969- |g Vladislav Aleksandrovich |3 (RuTPU)RU\TPU\pers\41878 |9 21445 | |
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