Effect of short-pulsed ion irradiation on the optical and electrical properties of titanium nitride films deposited by reactive magnetron sputtering

Bibliografiske detaljer
Parent link:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Vol. 526.— 2022.— [P. 51-59]
Corporate Authors: Национальный исследовательский Томский политехнический университет Исследовательская школа физики высокоэнергетических процессов, Национальный исследовательский Томский политехнический университет Инженерная школа новых производственных технологий Научно-производственная лаборатория "Импульсно-пучковых, электроразрядных и плазменных технологий"
Andre forfattere: Konusov F. V. Fedor Valerievich, Pavlov S. K. Sergey Konstantinovich, Lauk A. L. Aleksandr Lukyanovich, Kabyshev A. V. Alexander Vasilievich, Novikov V. A. Vadim Aleksandrovich, Gadirov R. M. Ruslan Mukhamedzhanovich, Tarbokov V. A. Vladislav Aleksandrovich, Remnev (Remnyov) G. E. Gennady Efimovich
Summary:Title screen
The effect of short-pulsed irradiation with 220 keV carbon ions for fluences of 2.2 × 1013 - 2.1 × 1015 cm−2 on the optical and electrical properties of titanium nitride films deposited by reactive magnetron sputtering on silicon and steel substrates has been studied. Relationships are obtained between the irradiation conditions and the parameters of interband absorption. A relationship has been established between the concentration of defects before and after irradiation, the degree of overlap of their levels and changes in the optical and electrical properties of the films. Reasons of high radiation resistance of the films are discussed. The optical and electrical properties of the films change during irradiation in two stages. The first stage is related to the annihilation of defects, the second stage is associated with their accumulation. Irradiation of films significantly slows down the rate of oxidation of their surface layers and stabilizes the electrical properties.
Режим доступа: по договору с организацией-держателем ресурса
Udgivet: 2022
Fag:
Online adgang:https://doi.org/10.1016/j.nimb.2022.06.011
Format: Electronisk Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=668261

MARC

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200 1 |a Effect of short-pulsed ion irradiation on the optical and electrical properties of titanium nitride films deposited by reactive magnetron sputtering  |f F. V. Konusov, S. K. Pavlov, A. L. Lauk [et al.] 
203 |a Text  |c electronic 
300 |a Title screen 
320 |a [References: 42 tit.] 
330 |a The effect of short-pulsed irradiation with 220 keV carbon ions for fluences of 2.2 × 1013 - 2.1 × 1015 cm−2 on the optical and electrical properties of titanium nitride films deposited by reactive magnetron sputtering on silicon and steel substrates has been studied. Relationships are obtained between the irradiation conditions and the parameters of interband absorption. A relationship has been established between the concentration of defects before and after irradiation, the degree of overlap of their levels and changes in the optical and electrical properties of the films. Reasons of high radiation resistance of the films are discussed. The optical and electrical properties of the films change during irradiation in two stages. The first stage is related to the annihilation of defects, the second stage is associated with their accumulation. Irradiation of films significantly slows down the rate of oxidation of their surface layers and stabilizes the electrical properties. 
333 |a Режим доступа: по договору с организацией-держателем ресурса 
461 |t Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 
463 |t Vol. 526  |v [P. 51-59]  |d 2022 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
610 1 |a ion irradiation 
610 1 |a TiN coatings 
610 1 |a radiation defects 
610 1 |a absorption 
610 1 |a ионное облучение 
610 1 |a покрытия 
610 1 |a радиационные дефекты 
610 1 |a поглощение 
701 1 |a Konusov  |b F. V.  |c physicist  |c Lead Engineer of Tomsk Polytechnic University, Candidate of physical and mathematical sciences  |f 1958-  |g Fedor Valerievich  |3 (RuTPU)RU\TPU\pers\32570  |9 16491 
701 1 |a Pavlov  |b S. K.  |c physicist  |c Engineer of Tomsk Polytechnic University  |f 1990-  |g Sergey Konstantinovich  |3 (RuTPU)RU\TPU\pers\32875  |9 16723 
701 1 |a Lauk  |b A. L.  |c Physicist  |c Leading engineer of Tomsk Polytechnic University  |f 1957-  |g Aleksandr Lukyanovich  |3 (RuTPU)RU\TPU\pers\37675  |9 20480 
701 1 |a Kabyshev  |b A. V.  |c specialist in the field of electric power engineering  |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences  |f 1958-  |g Alexander Vasilievich  |3 (RuTPU)RU\TPU\pers\32572  |9 16493 
701 1 |a Novikov  |b V. A.  |g Vadim Aleksandrovich 
701 1 |a Gadirov  |b R. M.  |g Ruslan Mukhamedzhanovich 
701 1 |a Tarbokov  |b V. A.  |c specialist in the field of material science  |c Leading engineer of Tomsk Polytechnic University, Candidate of technical sciences  |f 1969-  |g Vladislav Aleksandrovich  |3 (RuTPU)RU\TPU\pers\41878  |9 21445 
701 1 |a Remnev (Remnyov)  |b G. E.  |c physicist  |c Professor of Tomsk Polytechnic University, Doctor of technical sciences  |f 1948-  |g Gennady Efimovich  |3 (RuTPU)RU\TPU\pers\31500  |9 15661 
712 0 2 |a Национальный исследовательский Томский политехнический университет  |b Исследовательская школа физики высокоэнергетических процессов  |c (2017- )  |3 (RuTPU)RU\TPU\col\23551 
712 0 2 |a Национальный исследовательский Томский политехнический университет  |b Инженерная школа новых производственных технологий  |b Научно-производственная лаборатория "Импульсно-пучковых, электроразрядных и плазменных технологий"  |3 (RuTPU)RU\TPU\col\23502 
801 0 |a RU  |b 63413507  |c 20220728  |g RCR 
856 4 |u https://doi.org/10.1016/j.nimb.2022.06.011 
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