Effect of short-pulsed ion irradiation on the optical and electrical properties of titanium nitride films deposited by reactive magnetron sputtering
| Parent link: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 526.— 2022.— [P. 51-59] |
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| Corporate Authors: | , |
| Other Authors: | , , , , , , , |
| Summary: | Title screen The effect of short-pulsed irradiation with 220 keV carbon ions for fluences of 2.2 × 1013 - 2.1 × 1015 cm−2 on the optical and electrical properties of titanium nitride films deposited by reactive magnetron sputtering on silicon and steel substrates has been studied. Relationships are obtained between the irradiation conditions and the parameters of interband absorption. A relationship has been established between the concentration of defects before and after irradiation, the degree of overlap of their levels and changes in the optical and electrical properties of the films. Reasons of high radiation resistance of the films are discussed. The optical and electrical properties of the films change during irradiation in two stages. The first stage is related to the annihilation of defects, the second stage is associated with their accumulation. Irradiation of films significantly slows down the rate of oxidation of their surface layers and stabilizes the electrical properties. Режим доступа: по договору с организацией-держателем ресурса |
| Published: |
2022
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| Subjects: | |
| Online Access: | https://doi.org/10.1016/j.nimb.2022.06.011 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=668261 |
| Summary: | Title screen The effect of short-pulsed irradiation with 220 keV carbon ions for fluences of 2.2 × 1013 - 2.1 × 1015 cm−2 on the optical and electrical properties of titanium nitride films deposited by reactive magnetron sputtering on silicon and steel substrates has been studied. Relationships are obtained between the irradiation conditions and the parameters of interband absorption. A relationship has been established between the concentration of defects before and after irradiation, the degree of overlap of their levels and changes in the optical and electrical properties of the films. Reasons of high radiation resistance of the films are discussed. The optical and electrical properties of the films change during irradiation in two stages. The first stage is related to the annihilation of defects, the second stage is associated with their accumulation. Irradiation of films significantly slows down the rate of oxidation of their surface layers and stabilizes the electrical properties. Режим доступа: по договору с организацией-держателем ресурса |
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| DOI: | 10.1016/j.nimb.2022.06.011 |