Optical bistable SOI micro-ring resonators for memory applications; Optics Communications; Vol. 511
| Parent link: | Optics Communications Vol. 511.— 2022.— [127929, 5 p.] |
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| Körperschaft: | |
| Weitere Verfasser: | , , , , , , , , , |
| Zusammenfassung: | Title screen The present work focuses on experimental investigations of a bistable silicon-on-insulator (SOI) micro-ring resonator (MRR). The resonator exploits a continuous-wave operation of the carrier-induced bistability demonstrating a stable hysteresis response at the through and drop ports when the input power exceeds the threshold value. Flipping the optical input power provides a convenient mechanism for a switching of the MRR output characteristics between two steady states having a long holding time. The transition of the resonator output between these states is experimentally investigated. It is shown that the switching speed is limited by a low-to-high transition of 188 ns. Obtained results shows an application of the passive SOI MRR as an all-optical memory cell with two complementary outputs. Режим доступа: по договору с организацией-держателем ресурса |
| Sprache: | Englisch |
| Veröffentlicht: |
2022
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| Schlagworte: | |
| Online-Zugang: | https://doi.org/10.1016/j.optcom.2022.127929 |
| Format: | Elektronisch Buchkapitel |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=668219 |
MARC
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| 200 | 1 | |a Optical bistable SOI micro-ring resonators for memory applications |f A. A. Nikitin, I. A. Ryabtsev, A. A. Nikitin [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 33 tit.] | ||
| 330 | |a The present work focuses on experimental investigations of a bistable silicon-on-insulator (SOI) micro-ring resonator (MRR). The resonator exploits a continuous-wave operation of the carrier-induced bistability demonstrating a stable hysteresis response at the through and drop ports when the input power exceeds the threshold value. Flipping the optical input power provides a convenient mechanism for a switching of the MRR output characteristics between two steady states having a long holding time. The transition of the resonator output between these states is experimentally investigated. It is shown that the switching speed is limited by a low-to-high transition of 188 ns. Obtained results shows an application of the passive SOI MRR as an all-optical memory cell with two complementary outputs. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 338 | |b Российский научный фонд |d 21-79-10077 | ||
| 461 | |t Optics Communications | ||
| 463 | |t Vol. 511 |v [127929, 5 p.] |d 2022 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a micro-ring resonators | |
| 610 | 1 | |a bistability | |
| 610 | 1 | |a two-photon absorption | |
| 610 | 1 | |a all-optical memories | |
| 610 | 1 | |a silicon-on-insulator technology | |
| 610 | 1 | |a резонаторы | |
| 610 | 1 | |a бистабильность | |
| 610 | 1 | |a двухфотонное поглощение | |
| 701 | 1 | |a Nikitin |b A. A. |g Andrey Aleksandrovich | |
| 701 | 1 | |a Ryabtsev |b I. A. |g Iljya Aleksandrovich | |
| 701 | 1 | |a Nikitin |b A. A. |g Aleksey Aleksandrovich | |
| 701 | 1 | |a Kondrashov |b A. V. |g Aleksandr Viktorovich | |
| 701 | 1 | |a Semenov |b A. A. |g Aleksandr Anatoljevich | |
| 701 | 1 | |a Konkin |b D. A. |c specialist in the field of automation equipment and electronics |c assistant of Tomsk Polytechnic University |f 1988- |g Dmitry Anatoljevich |3 (RuTPU)RU\TPU\pers\39539 |9 21000 | |
| 701 | 1 | |a Kokolov |b A. A. |g Andrey Aleksandrovich | |
| 701 | 1 | |a Sheerman |b F. I. |g Fedor Ivanovich | |
| 701 | 1 | |a Babak |b L. I. |g Leonid Ivanovich | |
| 701 | 1 | |a Ustinov |b A. B. |g Aleksey Borisovich | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа информационных технологий и робототехники |c 2017- |x TPU |7 ca |8 rus |9 28330 |
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