Optical bistable SOI micro-ring resonators for memory applications

Optical bistable SOI micro-ring resonators for memory applications

Bibliografische gegevens
Parent link:Optics Communications
Vol. 511.— 2022.— [127929, 5 p.]
Coauteur: Национальный исследовательский Томский политехнический университет Инженерная школа информационных технологий и робототехники Отделение автоматизации и робототехники
Andere auteurs: Nikitin A. A. Andrey Aleksandrovich, Ryabtsev I. A. Iljya Aleksandrovich, Nikitin A. A. Aleksey Aleksandrovich, Kondrashov A. V. Aleksandr Viktorovich, Semenov A. A. Aleksandr Anatoljevich, Konkin D. A. Dmitry Anatoljevich, Kokolov A. A. Andrey Aleksandrovich, Sheerman F. I. Fedor Ivanovich, Babak L. I. Leonid Ivanovich, Ustinov A. B. Aleksey Borisovich
Samenvatting:Title screen
The present work focuses on experimental investigations of a bistable silicon-on-insulator (SOI) micro-ring resonator (MRR). The resonator exploits a continuous-wave operation of the carrier-induced bistability demonstrating a stable hysteresis response at the through and drop ports when the input power exceeds the threshold value. Flipping the optical input power provides a convenient mechanism for a switching of the MRR output characteristics between two steady states having a long holding time. The transition of the resonator output between these states is experimentally investigated. It is shown that the switching speed is limited by a low-to-high transition of 188 ns. Obtained results shows an application of the passive SOI MRR as an all-optical memory cell with two complementary outputs.
Режим доступа: по договору с организацией-держателем ресурса
Gepubliceerd in: 2022
Onderwerpen:
электронный ресурс
труды учёных ТПУ
micro-ring resonators
bistability
two-photon absorption
all-optical memories
silicon-on-insulator technology
резонаторы
бистабильность
двухфотонное поглощение
Online toegang:https://doi.org/10.1016/j.optcom.2022.127929
Formaat: Elektronisch Hoofdstuk
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=668219
Omschrijving
Samenvatting:Title screen
The present work focuses on experimental investigations of a bistable silicon-on-insulator (SOI) micro-ring resonator (MRR). The resonator exploits a continuous-wave operation of the carrier-induced bistability demonstrating a stable hysteresis response at the through and drop ports when the input power exceeds the threshold value. Flipping the optical input power provides a convenient mechanism for a switching of the MRR output characteristics between two steady states having a long holding time. The transition of the resonator output between these states is experimentally investigated. It is shown that the switching speed is limited by a low-to-high transition of 188 ns. Obtained results shows an application of the passive SOI MRR as an all-optical memory cell with two complementary outputs.
Режим доступа: по договору с организацией-держателем ресурса
DOI:10.1016/j.optcom.2022.127929

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