Irradiation resistance of preceramic paper-derived SiCf/SiC laminated composites

Bibliografske podrobnosti
Parent link:Journal of Materials Science
Vol. 57.— 2022.— [P. 10153-10166]
Corporate Authors: Национальный исследовательский Томский политехнический университет Инженерная школа ядерных технологий Отделение экспериментальной физики, Национальный исследовательский Томский политехнический университет Инженерная школа новых производственных технологий Отделение материаловедения
Drugi avtorji: Li Ke, Kashkarov E. B. Egor Borisovich, Ma Hailiang, Fan Ping, Zhang Qiaoli, Zhang Peng, Cao Xingzhong, Zhang Jilong, Wu Zhaohui, Lider A. M. Andrey Markovich, Travitsky (Travitzky) N. Nakhum, Yuan Daqing
Izvleček:Title screen
Influence of the ion irradiation at elevated temperatures on the novel preceramic paper-derived SiCf/SiC laminated composites fabricated by spark plasma sintering was investigated. The composites were subjected to high-dose simultaneous irradiation of silicon (Si) ions at 400 °C. Irradiation induces amorphization of the damaged area up to 30 dpa, and then recrystallization of amorphous regions with increasing dose occur. No evidence of cavities was found in SiCf/SiC composites irradiated by silicon ions up to 100 dpa. The irradiated composites pre-injected with 5000 appm He displays low swelling (~ 0.3%). The irradiation with Si ions may suppress the cavity nucleation and they growth in SiC layers.
Режим доступа: по договору с организацией-держателем ресурса
Izdano: 2022
Teme:
Online dostop:https://doi.org/10.1007/s10853-022-07294-6
Format: Elektronski Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=668136

MARC

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200 1 |a Irradiation resistance of preceramic paper-derived SiCf/SiC laminated composites  |f Li Ke, E. B. Kashkarov, Ma Hailiang [et al.] 
203 |a Text  |c electronic 
300 |a Title screen 
320 |a [References: 43 tit.] 
330 |a Influence of the ion irradiation at elevated temperatures on the novel preceramic paper-derived SiCf/SiC laminated composites fabricated by spark plasma sintering was investigated. The composites were subjected to high-dose simultaneous irradiation of silicon (Si) ions at 400 °C. Irradiation induces amorphization of the damaged area up to 30 dpa, and then recrystallization of amorphous regions with increasing dose occur. No evidence of cavities was found in SiCf/SiC composites irradiated by silicon ions up to 100 dpa. The irradiated composites pre-injected with 5000 appm He displays low swelling (~ 0.3%). The irradiation with Si ions may suppress the cavity nucleation and they growth in SiC layers. 
333 |a Режим доступа: по договору с организацией-держателем ресурса 
461 |t Journal of Materials Science 
463 |t Vol. 57  |v [P. 10153-10166]  |d 2022 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
610 1 |a ионное облучение 
610 1 |a композиты 
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701 0 |a Li Ke  |c physicist  |c engineer of Tomsk Polytechnic University  |f 1992-  |3 (RuTPU)RU\TPU\pers\46144  |9 22057 
701 1 |a Kashkarov  |b E. B.  |c Physicist  |c Associate Professor, Researcher of Tomsk Polytechnic University, Candidate of Physical and Mathematical Sciences  |f 1991-  |g Egor Borisovich  |3 (RuTPU)RU\TPU\pers\34949  |9 18267 
701 0 |a Ma Hailiang 
701 0 |a Fan Ping 
701 0 |a Zhang Qiaoli 
701 0 |a Zhang Peng 
701 0 |a Cao Xingzhong 
701 0 |a Zhang Jilong 
701 0 |a Wu Zhaohui 
701 1 |a Lider  |b A. M.  |c Physicist  |c Professor of Tomsk Polytechnic University, Doctor of Technical Sciences  |f 1976-2025  |g Andrey Markovich  |y Tomsk  |3 (RuTPU)RU\TPU\pers\30400  |9 14743 
701 1 |a Travitsky (Travitzky)  |b N.  |c specialist in the field of material science  |c Professor of Tomsk Polytechnic University  |f 1951-  |g Nakhum  |3 (RuTPU)RU\TPU\pers\42461 
701 0 |a Yuan Daqing 
712 0 2 |a Национальный исследовательский Томский политехнический университет  |b Инженерная школа ядерных технологий  |b Отделение экспериментальной физики  |3 (RuTPU)RU\TPU\col\23549 
712 0 2 |a Национальный исследовательский Томский политехнический университет  |b Инженерная школа новых производственных технологий  |b Отделение материаловедения  |3 (RuTPU)RU\TPU\col\23508 
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