Influence of the Substrate Roughness on the Accuracy of Measuring the Impurity Depth Distribution by Secondary-Ion Mass Spectrometry; Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques; Vol. 15, iss. 6

Bibliografski detalji
Parent link:Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
Vol. 15, iss. 6.— 2021.— [P. 1191–1194]
Glavni autor: Ghyngazov A. S. Aleksandr Sergeevich
Autor kompanije: Национальный исследовательский Томский политехнический университет Институт неразрушающего контроля Проблемная научно-исследовательская лаборатория электроники, диэлектриков и полупроводников
Daljnji autori: Surzhikov A. P. Anatoly Petrovich, Gyngazov (Ghyngazov) S. A. Sergey Anatolievich
Sažetak:Title screen
Knowing the distribution of the impurity concentration in the surface layers of solids is of great importance in technologies for modifying materials by methods of surface treatment. For these purposes, it is promising to use secondary-ion mass spectrometry. Due to the fact that the depths of the surface layers analyzed by this method do not exceed several microns, the task of reducing the influence of the microroughness of the analyzed surface on the results of measuring the distribution of the impurity concentration over depth becomes urgent. Using the example of the “zirconium ceramics–thin aluminum film” system, the methodological issues of minimizing the effect of the ceramic surface microrelief on measuring the distribution of aluminum impurity ions over the sample depth after thermal annealing are solved. It is shown that the measurement accuracy increases by an order of magnitude or more if, in addition to the main measurement of the sample after thermal annealing, the measurement of the base sample, which is identical to the control sample, is carried out before thermal annealing. The desired distribution of impurity ions over the depth of the sample is determined by subtracting the distribution obtained for the base sample from the distribution of the impurity in the control sample.
Режим доступа: по договору с организацией-держателем ресурса
Jezik:engleski
Izdano: 2021
Teme:
Online pristup:https://doi.org/10.1134/S1027451021060094
Format: MixedMaterials Elektronički Poglavlje knjige
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=668052

MARC

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200 1 |a Influence of the Substrate Roughness on the Accuracy of Measuring the Impurity Depth Distribution by Secondary-Ion Mass Spectrometry  |f A. S. Ghyngazov, A. P. Surzhikov, S. A. Gyngazov (Ghyngazov) 
203 |a Text  |c electronic 
300 |a Title screen 
320 |a [References: 17 tit.] 
330 |a Knowing the distribution of the impurity concentration in the surface layers of solids is of great importance in technologies for modifying materials by methods of surface treatment. For these purposes, it is promising to use secondary-ion mass spectrometry. Due to the fact that the depths of the surface layers analyzed by this method do not exceed several microns, the task of reducing the influence of the microroughness of the analyzed surface on the results of measuring the distribution of the impurity concentration over depth becomes urgent. Using the example of the “zirconium ceramics–thin aluminum film” system, the methodological issues of minimizing the effect of the ceramic surface microrelief on measuring the distribution of aluminum impurity ions over the sample depth after thermal annealing are solved. It is shown that the measurement accuracy increases by an order of magnitude or more if, in addition to the main measurement of the sample after thermal annealing, the measurement of the base sample, which is identical to the control sample, is carried out before thermal annealing. The desired distribution of impurity ions over the depth of the sample is determined by subtracting the distribution obtained for the base sample from the distribution of the impurity in the control sample. 
333 |a Режим доступа: по договору с организацией-держателем ресурса 
461 |t Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques 
463 |t Vol. 15, iss. 6  |v [P. 1191–1194]  |d 2021 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
610 1 |a secondary-ion mass spectrometry 
610 1 |a zirconium ceramics 
610 1 |a thin metal films 
610 1 |a thermal annealing 
610 1 |a diffusion 
610 1 |a масс-спектрометрия 
610 1 |a циркониевая керамика 
610 1 |a тонкие металлические пленки 
610 1 |a термический отжиг 
610 1 |a распространение 
700 1 |a Ghyngazov  |b A. S.  |g Aleksandr Sergeevich 
701 1 |a Surzhikov  |b A. P.  |c physicist  |c Professor of Tomsk Polytechnic University, doctor of physical and mathematical sciences (DSc)  |f 1951-  |g Anatoly Petrovich  |3 (RuTPU)RU\TPU\pers\30237  |9 14617 
701 1 |a Gyngazov (Ghyngazov)  |b S. A.  |c specialist in the field of electronics  |c Professor of Tomsk Polytechnic University, Doctor of technical sciences  |f 1958-  |g Sergey Anatolievich  |3 (RuTPU)RU\TPU\pers\33279  |9 17024 
712 0 2 |a Национальный исследовательский Томский политехнический университет  |b Институт неразрушающего контроля  |b Проблемная научно-исследовательская лаборатория электроники, диэлектриков и полупроводников  |3 (RuTPU)RU\TPU\col\19033 
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