Exploring Charged Defects in Ferroelectrics by the Switching Spectroscopy Piezoresponse Force Microscopy; Small Methods; Vol. 6, iss. 2

Exploring Charged Defects in Ferroelectrics by the Switching Spectroscopy Piezoresponse Force Microscopy; Small Methods; Vol. 6, iss. 2

Dettagli Bibliografici
Parent link:Small Methods
Vol. 6, iss. 2.— 2022.— [2101289, 12 p.]
Ente Autore: Национальный исследовательский Томский политехнический университет Исследовательская школа химических и биомедицинских технологий
Altri autori: Alikin D. Denis, Abramov A. Aleksandr, Turygin A. Anton, Ivlev A. Anton, Pryakhina V. Viktoriya, Karpinsky D. Dmitry, Qingyuan Hu, Li Jin, Shur V. Vladimir, Tselev A. Alexander, Kholkin A. L. Andrei Leonidovich
Riassunto:Title screen
Monitoring the charged defect concentration at the nanoscale is of critical importance for both the fundamental science and applications of ferroelectrics. However, up-to-date, high-resolution study methods for the investigation of structural defects, such as transmission electron microscopy, X-ray tomography, etc., are expensive and demand complicated sample preparation. With an example of the lanthanum-doped bismuth ferrite ceramics, a novel method is proposed based on the switching spectroscopy piezoresponse force microscopy (SSPFM) that allows probing the electric potential from buried subsurface charged defects in the ferroelectric materials with a nanometer-scale spatial resolution. When compared with the composition-sensitive methods, such as neutron diffraction, X-ray photoelectron spectroscopy, and local time-of-flight secondary ion mass spectrometry, the SSPFM sensitivity to the variation of the electric potential from the charged defects is shown to be equivalent to less than 0.3 at% of the defect concentration. Additionally, the possibility to locally evaluate dynamics of the polarization screening caused by the charged defects is demonstrated, which is of significant interest for further understanding defect-mediated processes in ferroelectrics.
Lingua:inglese
Pubblicazione: 2022
Soggetti:
электронный ресурс
труды учёных ТПУ
bias field domain walls
hysteresis loops
polarization reversal screening vacancies
доменные стенки
поля смещения
петля гистерезиса
Accesso online:https://doi.org/10.1002/smtd.202101289
Natura: Elettronico Capitolo di libro
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=668007

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