Exploring Charged Defects in Ferroelectrics by the Switching Spectroscopy Piezoresponse Force Microscopy
| Parent link: | Small Methods Vol. 6, iss. 2.— 2022.— [2101289, 12 p.] |
|---|---|
| अन्य लेखक: | , , , , , , , , , , |
| सारांश: | Title screen Monitoring the charged defect concentration at the nanoscale is of critical importance for both the fundamental science and applications of ferroelectrics. However, up-to-date, high-resolution study methods for the investigation of structural defects, such as transmission electron microscopy, X-ray tomography, etc., are expensive and demand complicated sample preparation. With an example of the lanthanum-doped bismuth ferrite ceramics, a novel method is proposed based on the switching spectroscopy piezoresponse force microscopy (SSPFM) that allows probing the electric potential from buried subsurface charged defects in the ferroelectric materials with a nanometer-scale spatial resolution. When compared with the composition-sensitive methods, such as neutron diffraction, X-ray photoelectron spectroscopy, and local time-of-flight secondary ion mass spectrometry, the SSPFM sensitivity to the variation of the electric potential from the charged defects is shown to be equivalent to less than 0.3 at% of the defect concentration. Additionally, the possibility to locally evaluate dynamics of the polarization screening caused by the charged defects is demonstrated, which is of significant interest for further understanding defect-mediated processes in ferroelectrics. |
| भाषा: | अंग्रेज़ी |
| प्रकाशित: |
2022
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| विषय: | |
| ऑनलाइन पहुंच: | https://doi.org/10.1002/smtd.202101289 |
| स्वरूप: | इलेक्ट्रोनिक पुस्तक अध्याय |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=668007 |
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| 200 | 1 | |a Exploring Charged Defects in Ferroelectrics by the Switching Spectroscopy Piezoresponse Force Microscopy |f D. Alikin, A. Abramov, A. Turygin [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 76 tit.] | ||
| 330 | |a Monitoring the charged defect concentration at the nanoscale is of critical importance for both the fundamental science and applications of ferroelectrics. However, up-to-date, high-resolution study methods for the investigation of structural defects, such as transmission electron microscopy, X-ray tomography, etc., are expensive and demand complicated sample preparation. With an example of the lanthanum-doped bismuth ferrite ceramics, a novel method is proposed based on the switching spectroscopy piezoresponse force microscopy (SSPFM) that allows probing the electric potential from buried subsurface charged defects in the ferroelectric materials with a nanometer-scale spatial resolution. When compared with the composition-sensitive methods, such as neutron diffraction, X-ray photoelectron spectroscopy, and local time-of-flight secondary ion mass spectrometry, the SSPFM sensitivity to the variation of the electric potential from the charged defects is shown to be equivalent to less than 0.3 at% of the defect concentration. Additionally, the possibility to locally evaluate dynamics of the polarization screening caused by the charged defects is demonstrated, which is of significant interest for further understanding defect-mediated processes in ferroelectrics. | ||
| 461 | |t Small Methods | ||
| 463 | |t Vol. 6, iss. 2 |v [2101289, 12 p.] |d 2022 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a bias field domain walls | |
| 610 | 1 | |a hysteresis loops | |
| 610 | 1 | |a polarization reversal screening vacancies | |
| 610 | 1 | |a доменные стенки | |
| 610 | 1 | |a поля смещения | |
| 610 | 1 | |a петля гистерезиса | |
| 701 | 1 | |a Alikin |b D. |g Denis | |
| 701 | 1 | |a Abramov |b A. |g Aleksandr | |
| 701 | 1 | |a Turygin |b A. |g Anton | |
| 701 | 1 | |a Ivlev |b A. |g Anton | |
| 701 | 1 | |a Pryakhina |b V. |g Viktoriya | |
| 701 | 1 | |a Karpinsky |b D. |g Dmitry | |
| 701 | 0 | |a Qingyuan Hu | |
| 701 | 0 | |a Li Jin | |
| 701 | 1 | |a Shur |b V. |g Vladimir | |
| 701 | 1 | |a Tselev |b A. |g Alexander | |
| 701 | 1 | |a Kholkin |b A. L. |c physicist |c Director of the International Research Center for PMEM of the Tomsk Polytechnic University, Candidate of Physical and Mathematical Sciences |f 1954- |g Andrei Leonidovich |3 (RuTPU)RU\TPU\pers\47207 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Исследовательская школа химических и биомедицинских технологий |c (2017- ) |3 (RuTPU)RU\TPU\col\23537 |
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| 856 | 4 | |u https://doi.org/10.1002/smtd.202101289 | |
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