Distribution of Hydrogen and Defects in the Zr/Nb Nanoscale Multilayer Coatings after Proton Irradiation; Materials; Vol. 15, iss. 9

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Parent link:Materials
Vol. 15, iss. 9.— 2022.— 3332, 17 p.
Korporativní autor: Национальный исследовательский Томский политехнический университет Инженерная школа ядерных технологий
Další autoři: Laptev R. S. Roman Sergeevich, Stepanova E. N. Ekaterina Nikolaevna, Pushilina N. S. Natalia Sergeevna, Svyatkin L. A. Leonid Aleksandrovich, Krotkevich D. G. Dmitry Georgievich, Lomygin A. D. Anton Dmitrievich, Ognev S. O. Sergey Olegovich, Simek K. Kshishtof, Doroshkevich A. S. Alexander Sergeevich, Uglov V. V. Vladimir Vasiljevich
Shrnutí:Title screen
Radiation damage is one of the significant factors limiting the operating time of many structural materials working under extreme conditions. One of the promising directions in the development of materials that are resistant to radiation damage and have improved physical and mechanical properties is the creation of nanoscale multilayer coatings (NMCs). The paper is devoted to the experimental comprehension of changes in the defect structure and mechanical properties of nanoscale multilayer coatings (NMCs) with alternating layers of Zr and Nb under irradiation. Series of Zr/Nb NMCs with different thicknesses of individual layers were fabricated by magnetron sputtering and subjected to H+ irradiation. The evolution of structure and phase states, as well as the defect state under proton irradiation, was studied using the methods of high-resolution transmission electron microscopy (HRTEM), X-ray diffraction analysis (XRD), glow discharge optical emission spectroscopy (GDOES), and positron annihilation spectroscopy (PAS). The layer-by-layer analysis of structural defects was carried out by Doppler broadening spectroscopy (DBS) using a variable-energy positron beam. To estimate the binding energy and the energy paths for the hydrogen diffusion in Zr/Nb NMCs, calculations from the first principles were used. When the thickness of individual layers is less than 25 nm, irradiation causes destruction of the interfaces, but there is no significant increase in the defect level, the S parameter (open volume defects amount) before and after irradiation is practically unchanged. After irradiation of NMC Zr/Nb with a thickness of layers 50 and 100 nm, the initial microstructure is retained, and the S parameter is significantly reduced. The GDOES data reveal the irregular H accumulation at the interface caused by significant differences in H diffusion barriers in the bulk of Zr and Nb multilayers as well as near the interface's region.
Jazyk:angličtina
Vydáno: 2022
Témata:
On-line přístup:http://earchive.tpu.ru/handle/11683/72793
https://doi.org/10.3390/ma15093332
Médium: MixedMaterials Elektronický zdroj Kapitola
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=667931

MARC

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200 1 |a Distribution of Hydrogen and Defects in the Zr/Nb Nanoscale Multilayer Coatings after Proton Irradiation  |f R. S. Laptev, E. N. Stepanova, N. S. Pushilina [et al.] 
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300 |a Title screen 
320 |a References: 58 tit. 
330 |a Radiation damage is one of the significant factors limiting the operating time of many structural materials working under extreme conditions. One of the promising directions in the development of materials that are resistant to radiation damage and have improved physical and mechanical properties is the creation of nanoscale multilayer coatings (NMCs). The paper is devoted to the experimental comprehension of changes in the defect structure and mechanical properties of nanoscale multilayer coatings (NMCs) with alternating layers of Zr and Nb under irradiation. Series of Zr/Nb NMCs with different thicknesses of individual layers were fabricated by magnetron sputtering and subjected to H+ irradiation. The evolution of structure and phase states, as well as the defect state under proton irradiation, was studied using the methods of high-resolution transmission electron microscopy (HRTEM), X-ray diffraction analysis (XRD), glow discharge optical emission spectroscopy (GDOES), and positron annihilation spectroscopy (PAS). The layer-by-layer analysis of structural defects was carried out by Doppler broadening spectroscopy (DBS) using a variable-energy positron beam. To estimate the binding energy and the energy paths for the hydrogen diffusion in Zr/Nb NMCs, calculations from the first principles were used. When the thickness of individual layers is less than 25 nm, irradiation causes destruction of the interfaces, but there is no significant increase in the defect level, the S parameter (open volume defects amount) before and after irradiation is practically unchanged. After irradiation of NMC Zr/Nb with a thickness of layers 50 and 100 nm, the initial microstructure is retained, and the S parameter is significantly reduced. The GDOES data reveal the irregular H accumulation at the interface caused by significant differences in H diffusion barriers in the bulk of Zr and Nb multilayers as well as near the interface's region. 
338 |b Российский научный фонд  |d 20-79-10343 
461 1 |t Materials 
463 1 |t Vol. 15, iss. 9  |v 3332, 17 p.  |d 2022 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
610 1 |a nanoscale multilayer coatings 
610 1 |a H+irradiation 
610 1 |a density functional theory 
610 1 |a positron annihilation 
610 1 |a radiation defects 
610 1 |a многослойные покрытия 
610 1 |a облучение 
610 1 |a аннигиляция 
610 1 |a позитроны 
610 1 |a радиационные дефекты 
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701 1 |a Stepanova  |b E. N.  |c physicist  |c Associate Professor of Tomsk Polytechnic University, Candidate of technical sciences  |f 1981-  |g Ekaterina Nikolaevna  |3 (RuTPU)RU\TPU\pers\35054  |9 18329 
701 1 |a Pushilina  |b N. S.  |c physicist  |c associate Professor of Tomsk Polytechnic University, candidate of physico-mathematical Sciences  |f 1984-  |g Natalia Sergeevna  |3 (RuTPU)RU\TPU\pers\30838  |9 15085 
701 1 |a Svyatkin  |b L. A.  |c physicist  |c Associate Professor of Tomsk Polytechnic University, Candidate of Physical and Mathematical Sciences  |f 1988-  |g Leonid Aleksandrovich  |3 (RuTPU)RU\TPU\pers\34216  |9 17747 
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