Kinetics of plasma-assisted chemical vapor deposition combined with inductively excited RF discharge and properties of a-C:H:SiOx coatings; Vacuum; Vol. 199

Bibliografiset tiedot
Parent link:Vacuum
Vol. 199.— 2022.— [110982, 9 p.]
Yhteisötekijä: Национальный исследовательский Томский политехнический университет Инженерная школа ядерных технологий Отделение экспериментальной физики
Muut tekijät: Grenadyorov A. S. Aleksandr Sergeevich, Oskirko V. O. Vladimir Olegovich, Solovjev A. A. Andrey Aleksandrovich, Semenov V. A. Vyacheslav Arkadjevich, Rabotkin S. V. Sergey Viktorovich, Oskomov K. V. Konstantin Vladimirovich, Sypchenko V. S. Vladimir Sergeevich
Yhteenveto:Title screen
The paper studies the plasma-assisted chemical vapor deposition of a-C:H:SiOx coatings in plasma of non-self-sustained arc discharge with a hot cathode combined with inductively excited radio-frequency (RF) discharge. The a-C:H:SiOx coatings are produced by polyphenyl methylsiloxane (PPMS) dissociation in plasma with and without RF discharge. The optical emission spectroscopy is used to study the PPMS dissociation process. Raman spectroscopy provides the structural investigations of the obtained coatings, while the energy dispersive X-ray spectroscopy is used to analyze the chemical composition. It is shown that the mechanical and tribological properties of a-C:H:SiOx coatings depend on the RF discharge power and the bias voltage amplitude of the substrate. It is demonstrated that substrate bias voltage can be reduced during the coating deposition in combined discharge without significant degradation of its mechanical and tribological properties due to the better dissociation and ionization of PPMS vapor molecules in inductively excited RF discharge.
Режим доступа: по договору с организацией-держателем ресурса
Kieli:englanti
Julkaistu: 2022
Aiheet:
Linkit:https://doi.org/10.1016/j.vacuum.2022.110982
Aineistotyyppi: Elektroninen Kirjan osa
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=667876

MARC

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200 1 |a Kinetics of plasma-assisted chemical vapor deposition combined with inductively excited RF discharge and properties of a-C:H:SiOx coatings  |f A. S. Grenadyorov, V. O. Oskirko, A. A. Solovjev [et al.] 
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300 |a Title screen 
320 |a [References: 36 tit.] 
330 |a The paper studies the plasma-assisted chemical vapor deposition of a-C:H:SiOx coatings in plasma of non-self-sustained arc discharge with a hot cathode combined with inductively excited radio-frequency (RF) discharge. The a-C:H:SiOx coatings are produced by polyphenyl methylsiloxane (PPMS) dissociation in plasma with and without RF discharge. The optical emission spectroscopy is used to study the PPMS dissociation process. Raman spectroscopy provides the structural investigations of the obtained coatings, while the energy dispersive X-ray spectroscopy is used to analyze the chemical composition. It is shown that the mechanical and tribological properties of a-C:H:SiOx coatings depend on the RF discharge power and the bias voltage amplitude of the substrate. It is demonstrated that substrate bias voltage can be reduced during the coating deposition in combined discharge without significant degradation of its mechanical and tribological properties due to the better dissociation and ionization of PPMS vapor molecules in inductively excited RF discharge. 
333 |a Режим доступа: по договору с организацией-держателем ресурса 
338 |b Российский научный фонд  |d 19-19-00186 
461 |t Vacuum 
463 |t Vol. 199  |v [110982, 9 p.]  |d 2022 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
610 1 |a plasma-assisted chemical vapor deposition 
610 1 |a polyphenyl methylsiloxane 
610 1 |a a-C:H:SiOx coating 
610 1 |a hardness 
610 1 |a wear resistance 
610 1 |a optical emission spectroscopy 
610 1 |a покрытия 
610 1 |a твердость 
610 1 |a износостойкость 
610 1 |a оптическая спектроскопия 
610 1 |a химическое осаждение 
701 1 |a Grenadyorov  |b A. S.  |g Aleksandr Sergeevich 
701 1 |a Oskirko  |b V. O.  |g Vladimir Olegovich 
701 1 |a Solovjev  |b A. A.  |g Andrey Aleksandrovich 
701 1 |a Semenov  |b V. A.  |g Vyacheslav Arkadjevich 
701 1 |a Rabotkin  |b S. V.  |g Sergey Viktorovich 
701 1 |a Oskomov  |b K. V.  |g Konstantin Vladimirovich 
701 1 |a Sypchenko  |b V. S.  |c physicist  |c Associate Professor of Tomsk Polytechnic University, Candidate of Sciences  |f 1987-  |g Vladimir Sergeevich  |3 (RuTPU)RU\TPU\pers\33791  |9 17389 
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