Glass waste derived silicon carbide synthesis via direct current atmospheric arc plasma; Waste Management; Vol. 144

Podrobná bibliografie
Parent link:Waste Management
Vol. 144.— 2022.— [P. 263-271]
Korporativní autor: Национальный исследовательский Томский политехнический университет Инженерная школа энергетики Отделение электроэнергетики и электротехники
Další autoři: Pak A. Ya. Aleksandr Yakovlevich, Bolatova Zh. S. Zhanar Sanatovna, Nikitin D. S. Dmitry Sergeevich, Korchagina A. P. Anastasiya Pavlovna, Kalinina N. A. Natalya Andreevna, Ivashutenko A. S. Alexander Sergeevich
Shrnutí:Title screen
The paper presents the results of the experimental studies addressing the production of silicon carbide from glass waste by electric arc plasma processing. A feature of the method is the possibility of its implementation without the use of vacuum equipment. It is possible due to the effect of self-shielding of the reaction volume from atmospheric oxygen. This approach significantly simplifies the design of the electric arc reactor and its performance. After plasma processing of various types of glass waste (such as bottle glass, window glass, medical glass, quartz glass, parts of worn-out scientific and industrial equipment), silicon carbide based material was produced. Silicon carbide was obtained from a mixture of various glass waste at a current 200 A, where blend was first purified from unbound carbon and then was consolidated by spark plasma sintering at 1800 °C and 60 MPa pressure for 10 min. As a result, a ceramic bulk sample was fabricated from a mixture of glass waste of various origin. Such sample was characterized with hardness of 14.8 GPa, and attained density of 92.5 %. Despite a possible increase in the density due to impurities and inhomogeneities, the hardness of the fabricated sample is comparable to that of other silicon carbide based materials, including commercial ones. Since the hardness of the produced silicon carbide based material is comparable to that of commercial materials, the use of glass waste of various origin could be feasible for synthesis of silicon carbide based powders.
Режим доступа: по договору с организацией-держателем ресурса
Jazyk:angličtina
Vydáno: 2022
Témata:
On-line přístup:https://doi.org/10.1016/j.wasman.2022.04.002
Médium: xMaterials Elektronický zdroj Kapitola
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=667819

MARC

LEADER 00000naa0a2200000 4500
001 667819
005 20250403160700.0
035 |a (RuTPU)RU\TPU\network\39030 
035 |a RU\TPU\network\27577 
090 |a 667819 
100 |a 20220426d2022 k||y0rusy50 ba 
101 0 |a eng 
135 |a drcn ---uucaa 
181 0 |a i  
182 0 |a b 
200 1 |a Glass waste derived silicon carbide synthesis via direct current atmospheric arc plasma  |f A. Ya. Pak, Zh. Bolatova, D. S. Nikitin [et al.] 
203 |a Text  |c electronic 
300 |a Title screen 
330 |a The paper presents the results of the experimental studies addressing the production of silicon carbide from glass waste by electric arc plasma processing. A feature of the method is the possibility of its implementation without the use of vacuum equipment. It is possible due to the effect of self-shielding of the reaction volume from atmospheric oxygen. This approach significantly simplifies the design of the electric arc reactor and its performance. After plasma processing of various types of glass waste (such as bottle glass, window glass, medical glass, quartz glass, parts of worn-out scientific and industrial equipment), silicon carbide based material was produced. Silicon carbide was obtained from a mixture of various glass waste at a current 200 A, where blend was first purified from unbound carbon and then was consolidated by spark plasma sintering at 1800 °C and 60 MPa pressure for 10 min. As a result, a ceramic bulk sample was fabricated from a mixture of glass waste of various origin. Such sample was characterized with hardness of 14.8 GPa, and attained density of 92.5 %. Despite a possible increase in the density due to impurities and inhomogeneities, the hardness of the fabricated sample is comparable to that of other silicon carbide based materials, including commercial ones. Since the hardness of the produced silicon carbide based material is comparable to that of commercial materials, the use of glass waste of various origin could be feasible for synthesis of silicon carbide based powders. 
333 |a Режим доступа: по договору с организацией-держателем ресурса 
461 |t Waste Management 
463 |t Vol. 144  |v [P. 263-271]  |d 2022 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
610 1 |a glass waste 
610 1 |a arc plasma processing 
610 1 |a silicon carbide 
610 1 |a sustainable development 
610 1 |a resources recycling 
610 1 |a отходы 
610 1 |a стекло 
610 1 |a плазменная обработка 
610 1 |a карбид кремния 
610 1 |a устойчивое развитие 
610 1 |a переработка отходов 
701 1 |a Pak  |b A. Ya.  |c specialist in the field of electrical engineering  |c head of Department of Tomsk Polytechnic University, candidate of technical Sciences  |f 1986-  |g Aleksandr Yakovlevich  |3 (RuTPU)RU\TPU\pers\34120 
701 1 |a Bolatova  |b Zh. S.  |c specialist in the field of material science  |c engineer, junior researcher at Tomsk Polytechnic University  |f 1996-  |g Zhanar Sanatovna  |3 (RuTPU)RU\TPU\pers\47085  |9 22679 
701 1 |a Nikitin  |b D. S.  |c specialist in the field of electric power engineering  |c Associate Professor of Tomsk Polytechnic University, Candidate of Technical Sciences  |f 1991-  |g Dmitry Sergeevich  |3 (RuTPU)RU\TPU\pers\35633  |9 18802 
701 1 |a Korchagina  |b A. P.  |c student  |c Senior laboratory assistant at Tomsk Polytechnic University  |f 2000-  |g Anastasiya Pavlovna  |3 (RuTPU)RU\TPU\pers\47195 
701 1 |a Kalinina  |b N. A.  |g Natalya Andreevna  |f 1998-  |c Mining engineer  |c Technician of Tomsk Polytechnic University  |9 22866 
701 1 |a Ivashutenko  |b A. S.  |c specialist in the field of electrical engineering  |c Associate Professor of the Tomsk Polytechnic University, Candidate of technical sciences  |f 1981-  |g Alexander Sergeevich  |3 (RuTPU)RU\TPU\pers\33076  |9 16908 
712 0 2 |a Национальный исследовательский Томский политехнический университет  |b Инженерная школа энергетики  |b Отделение электроэнергетики и электротехники  |3 (RuTPU)RU\TPU\col\23505 
801 0 |a RU  |b 63413507  |c 20220426  |g RCR 
856 4 |u https://doi.org/10.1016/j.wasman.2022.04.002 
942 |c CF