Expanding the scope of SiC ceramics through its surface modification by different methods; Surface and Coatings Technology; Vol. 435

Bibliographische Detailangaben
Parent link:Surface and Coatings Technology
Vol. 435.— 2022.— [128263, 15 p.]
Körperschaften: Национальный исследовательский Томский политехнический университет Исследовательская школа физики высокоэнергетических процессов, Национальный исследовательский Томский политехнический университет Инженерная школа энергетики Научно-образовательный центр И. Н. Бутакова (НОЦ И. Н. Бутакова), Национальный исследовательский Томский политехнический университет Инженерная школа энергетики Отделение электроэнергетики и электротехники
Weitere Verfasser: Feoktistov D. V. Dmitriy Vladimirovich, Kuznetsov G. V. Geny Vladimirovich, Sivkov A. A. Aleksandr Anatolyevich, Ivashutenko A. S. Alexander Sergeevich, Nikitin D. S. Dmitry Sergeevich, Shanenkov I. I. Ivan Igorevich, Abdelmagid A. M. H. Abdelrahman Mohamed Hamed, Orlova E. G. Evgeniya Georgievna
Zusammenfassung:Title screen
Controlling the surface wetting of silicon carbide (SiC) ceramics is an urgent problem as its solution will significantly expand the scope of this material. In this work, the submicron SiC ceramics was obtained from the ultradispersed SiC powder fabricated by the plasma dynamic synthesis method. The bulk SiC samples were produced by spark plasma sintering at 1600 °С, 1700 °С, and 1800 °С. The effect of sintering temperature and promising methods of surface modification on wetting, elemental composition and surface roughness of SiC ceramics was studied. The surface modification methods included polishing, laser texturing, low-temperature annealing, magnetron chromium sputtering, and their combination. To predict the type of a texture formed after nanosecond laser radiation, the graphic-analytical method was developed. The best hydrophilic properties of SiC ceramics (the contact angle decreased to 9.3°) were obtained after polishing with subsequent nanosecond laser texturing. The best hydrophobic properties of SiC ceramics (the contact angle increased to 135.3°) were obtained after a combination of polishing, laser texturing, and magnetron chromium sputtering. Controlling the surface wetting of SiC ceramics from hydrophilic to hydrophobic makes it possible to significantly expand the scope of this material, for example, to use it in drop cooling systems of advanced digital devices that emit ultrahigh heat fluxes up to 1000 W/cm2.
Режим доступа: по договору с организацией-держателем ресурса
Sprache:Englisch
Veröffentlicht: 2022
Schlagworte:
Online-Zugang:https://doi.org/10.1016/j.surfcoat.2022.128263
Format: Elektronisch Buchkapitel
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=667706

MARC

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200 1 |a Expanding the scope of SiC ceramics through its surface modification by different methods  |f D. V. Feoktistov, G. V. Kuznetsov, A. A. Sivkov [et al.] 
203 |a Text  |c electronic 
300 |a Title screen 
320 |a [References: 93 tit.] 
330 |a Controlling the surface wetting of silicon carbide (SiC) ceramics is an urgent problem as its solution will significantly expand the scope of this material. In this work, the submicron SiC ceramics was obtained from the ultradispersed SiC powder fabricated by the plasma dynamic synthesis method. The bulk SiC samples were produced by spark plasma sintering at 1600 °С, 1700 °С, and 1800 °С. The effect of sintering temperature and promising methods of surface modification on wetting, elemental composition and surface roughness of SiC ceramics was studied. The surface modification methods included polishing, laser texturing, low-temperature annealing, magnetron chromium sputtering, and their combination. To predict the type of a texture formed after nanosecond laser radiation, the graphic-analytical method was developed. The best hydrophilic properties of SiC ceramics (the contact angle decreased to 9.3°) were obtained after polishing with subsequent nanosecond laser texturing. The best hydrophobic properties of SiC ceramics (the contact angle increased to 135.3°) were obtained after a combination of polishing, laser texturing, and magnetron chromium sputtering. Controlling the surface wetting of SiC ceramics from hydrophilic to hydrophobic makes it possible to significantly expand the scope of this material, for example, to use it in drop cooling systems of advanced digital devices that emit ultrahigh heat fluxes up to 1000 W/cm2. 
333 |a Режим доступа: по договору с организацией-держателем ресурса 
338 |b Российский научный фонд  |d 21-73-10245 
461 |t Surface and Coatings Technology 
463 |t Vol. 435  |v [128263, 15 p.]  |d 2022 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
610 1 |a SiC ceramic 
610 1 |a wetting 
610 1 |a roughness 
610 1 |a microtexture 
610 1 |a spark plasma sintering 
610 1 |a карбид кремния 
610 1 |a керамика 
610 1 |a смачивание 
610 1 |a шероховатости 
610 1 |a микроструктуры 
610 1 |a искровое плазменное спекание 
610 1 |a модификации 
610 1 |a поверхности 
701 1 |a Feoktistov  |b D. V.  |c Specialist in the field of thermal engineering  |c Associate Professor; Deputy Director of Tomsk Polytechnic University, Candidate of technical sciences  |f 1983-  |g Dmitriy Vladimirovich  |3 (RuTPU)RU\TPU\pers\34158  |9 17698 
701 1 |a Kuznetsov  |b G. V.  |c Specialist in the field of heat power energy  |c Professor of Tomsk Polytechnic University, Doctor of Physical and Mathematical Sciences  |f 1949-  |g Geny Vladimirovich  |3 (RuTPU)RU\TPU\pers\31891  |9 15963 
701 1 |a Sivkov  |b A. A.  |c Specialist in the field of electric power engineering  |c Professor of Tomsk Polytechnic University, Doctor of technical sciences  |f 1951-  |g Aleksandr Anatolyevich  |3 (RuTPU)RU\TPU\pers\32273  |9 16262 
701 1 |a Ivashutenko  |b A. S.  |c specialist in the field of electrical engineering  |c Associate Professor of the Tomsk Polytechnic University, Candidate of technical sciences  |f 1981-  |g Alexander Sergeevich  |3 (RuTPU)RU\TPU\pers\33076  |9 16908 
701 1 |a Nikitin  |b D. S.  |c specialist in the field of electric power engineering  |c Associate Professor of Tomsk Polytechnic University, Candidate of Technical Sciences  |f 1991-  |g Dmitry Sergeevich  |3 (RuTPU)RU\TPU\pers\35633  |9 18802 
701 1 |a Shanenkov  |b I. I.  |c specialist in the field of electric power engineering  |c Associate Professor of the Department of Tomsk Polytechnic University, Candidate of Sciences  |f 1990-  |g Ivan Igorevich  |3 (RuTPU)RU\TPU\pers\32880  |9 16728 
701 1 |a Abdelmagid  |b A. M. H.  |g Abdelrahman Mohamed Hamed 
701 1 |a Orlova  |b E. G.  |c specialist in the field of thermal engineering  |c Associate Professor of Tomsk Polytechnic University, Candidate of Physical and Mathematical Sciences  |f 1991-  |g Evgeniya Georgievna  |3 (RuTPU)RU\TPU\pers\34157  |9 17697 
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