Influence of Contacts and Applied Voltage on a Structure of a Single GaN Nanowire; Applied Sciences; Vol. 11, iss. 20

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Parent link:Applied Sciences
Vol. 11, iss. 20.— 2021.— [9419, 18 p.]
Tác giả của công ty: Национальный исследовательский Томский политехнический университет Инженерная школа неразрушающего контроля и безопасности Центр промышленной томографии Международная научно-образовательная лаборатория неразрушающего контроля
Tác giả khác: Lazarev S. V. Sergey Vladimirovich, Kim Young Yong, Gelisio L. Luca, Bi Zh. Zhaoxia, Nowzari A. Ali, Zaluzhnyy I. A. Ivan, Khubbutdinov R. M. Ruslan, Dzhigaev D. Dmitry, Jeromin A. Amo, Keller T. F. Thomas, Sprung M. Michael, Mikkelsen A. Anders, Samuelson L. Lars, Vartanyants I. A. Ivan
Tóm tắt:Title screen
Semiconductor nanowires (NWs) have a broad range of applications for nano- and optoelectronics. The strain field of gallium nitride (GaN) NWs could be significantly changed when contacts are applied to them to form a final device, especially considering the piezoelectric properties of GaN. Investigation of influence of the metallic contacts on the structure of the NWs is of high importance for their applications in real devices. We have studied a series of different type of contacts and influence of the applied voltage bias on the contacted GaN NWs with the length of about 3 to 4 micrometers and with two different diameters of 200 nm and 350 nm. It was demonstrated that the NWs with the diameter of 200 nm are bend already by the interaction with the substrate. For all GaN NWs, significant structural changes were revealed after the contacts deposition. The results of our research may contribute to the future optoelectronic applications of the GaN nanowires.
Ngôn ngữ:Tiếng Anh
Được phát hành: 2021
Những chủ đề:
Truy cập trực tuyến:https://doi.org/10.3390/app11209419
Định dạng: Điện tử Chương của sách
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=667252

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