Influence of Contacts and Applied Voltage on a Structure of a Single GaN Nanowire; Applied Sciences; Vol. 11, iss. 20
| Источник: | Applied Sciences Vol. 11, iss. 20.— 2021.— [9419, 18 p.] |
|---|---|
| Автор-организация: | |
| Другие авторы: | , , , , , , , , , , , , , |
| Примечания: | Title screen Semiconductor nanowires (NWs) have a broad range of applications for nano- and optoelectronics. The strain field of gallium nitride (GaN) NWs could be significantly changed when contacts are applied to them to form a final device, especially considering the piezoelectric properties of GaN. Investigation of influence of the metallic contacts on the structure of the NWs is of high importance for their applications in real devices. We have studied a series of different type of contacts and influence of the applied voltage bias on the contacted GaN NWs with the length of about 3 to 4 micrometers and with two different diameters of 200 nm and 350 nm. It was demonstrated that the NWs with the diameter of 200 nm are bend already by the interaction with the substrate. For all GaN NWs, significant structural changes were revealed after the contacts deposition. The results of our research may contribute to the future optoelectronic applications of the GaN nanowires. |
| Язык: | английский |
| Опубликовано: |
2021
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| Предметы: | |
| Online-ссылка: | https://doi.org/10.3390/app11209419 |
| Формат: | Электронный ресурс Статья |
| Запись в KOHA: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=667252 |
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| 200 | 1 | |a Influence of Contacts and Applied Voltage on a Structure of a Single GaN Nanowire |f S. V. Lazarev, Kim Young Yong, L. Gelisio [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 28 tit.] | ||
| 330 | |a Semiconductor nanowires (NWs) have a broad range of applications for nano- and optoelectronics. The strain field of gallium nitride (GaN) NWs could be significantly changed when contacts are applied to them to form a final device, especially considering the piezoelectric properties of GaN. Investigation of influence of the metallic contacts on the structure of the NWs is of high importance for their applications in real devices. We have studied a series of different type of contacts and influence of the applied voltage bias on the contacted GaN NWs with the length of about 3 to 4 micrometers and with two different diameters of 200 nm and 350 nm. It was demonstrated that the NWs with the diameter of 200 nm are bend already by the interaction with the substrate. For all GaN NWs, significant structural changes were revealed after the contacts deposition. The results of our research may contribute to the future optoelectronic applications of the GaN nanowires. | ||
| 338 | |b Российский научный фонд |d 18–41-06001 | ||
| 461 | |t Applied Sciences | ||
| 463 | |t Vol. 11, iss. 20 |v [9419, 18 p.] |d 2021 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a GaN nanowires | |
| 610 | 1 | |a Bragg coherent diffraction | |
| 610 | 1 | |a piezoelectric effect | |
| 610 | 1 | |a finite element method | |
| 610 | 1 | |a нанопроволоки | |
| 610 | 1 | |a дифракция | |
| 610 | 1 | |a пьезоэлектрический эффект | |
| 610 | 1 | |a метод конечных элементов | |
| 610 | 1 | |a контакты | |
| 610 | 1 | |a напряжения | |
| 701 | 1 | |a Lazarev |b S. V. |c physicist |c engineer at Tomsk Polytechnic University |f 1984- |g Sergey Vladimirovich |3 (RuTPU)RU\TPU\pers\35210 | |
| 701 | 0 | |a Kim Young Yong | |
| 701 | 1 | |a Gelisio |b L. |g Luca | |
| 701 | 1 | |a Bi |b Zh. |g Zhaoxia | |
| 701 | 1 | |a Nowzari |b A. |g Ali | |
| 701 | 1 | |a Zaluzhnyy |b I. A. |g Ivan | |
| 701 | 1 | |a Khubbutdinov |b R. M. |g Ruslan | |
| 701 | 1 | |a Dzhigaev |b D. |g Dmitry | |
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| 701 | 1 | |a Vartanyants |b I. A. |g Ivan | |
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