Formation, Focusing and Transport of Highintensity, Low-Energy Metal Ion Beams; Russian Physics Journal; Vol. 63, iss. 10
| Parent link: | Russian Physics Journal Vol. 63, iss. 10.— 2021.— [P. 1700-1712] |
|---|---|
| مؤلف مشترك: | |
| مؤلفون آخرون: | , , , , |
| الملخص: | Title screen High-intensity implantation of low-energy ions into various materials demonstrates the formation of long, ionalloyed layers having a thickness of tens and hundreds of micrometers. A deep incorporation of alloying elements in materials is achieved, first of all, due to a stronger radiation-induced ion diffusion at ultrahigh current densities and radiation fluence ranging from 1020 to 1022 cm2, when the diffusion coefficient exceeds its classical value derived from Arrhenius theory by several orders of magnitude. Nevertheless, the generation of low-energy ions with energies of several or a few kiloelectronvolts at high current densities of several hundreds of milliamperes per square metre and their effective transport, is a sophisticated problem. The paper studies the ballistic focusing of high-intensity pulsed ion beams at 2 kV accelerating voltage, 800 ?s pulse time, 0.8 duty cycle, and their propagation through the preliminary injected low-density background plasma. Режим доступа: по договору с организацией-держателем ресурса |
| اللغة: | الإنجليزية |
| منشور في: |
2021
|
| الموضوعات: | |
| الوصول للمادة أونلاين: | https://doi.org/10.1007/s11182-021-02224-6 |
| التنسيق: | الكتروني فصل الكتاب |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=667075 |
MARC
| LEADER | 00000naa0a2200000 4500 | ||
|---|---|---|---|
| 001 | 667075 | ||
| 005 | 20250917140913.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\38279 | ||
| 090 | |a 667075 | ||
| 100 | |a 20220221d2021 k||y0rusy50 ba | ||
| 101 | 0 | |a eng | |
| 135 | |a drgn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a Formation, Focusing and Transport of Highintensity, Low-Energy Metal Ion Beams |f A. I. Ryabchikov, A. E. Shevelev, D. O. Sivin [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 47 tit.] | ||
| 330 | |a High-intensity implantation of low-energy ions into various materials demonstrates the formation of long, ionalloyed layers having a thickness of tens and hundreds of micrometers. A deep incorporation of alloying elements in materials is achieved, first of all, due to a stronger radiation-induced ion diffusion at ultrahigh current densities and radiation fluence ranging from 1020 to 1022 cm2, when the diffusion coefficient exceeds its classical value derived from Arrhenius theory by several orders of magnitude. Nevertheless, the generation of low-energy ions with energies of several or a few kiloelectronvolts at high current densities of several hundreds of milliamperes per square metre and their effective transport, is a sophisticated problem. The paper studies the ballistic focusing of high-intensity pulsed ion beams at 2 kV accelerating voltage, 800 ?s pulse time, 0.8 duty cycle, and their propagation through the preliminary injected low-density background plasma. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Russian Physics Journal | ||
| 463 | |t Vol. 63, iss. 10 |v [P. 1700-1712] |d 2021 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a vacuum arc plasma | |
| 610 | 1 | |a ion beam generation | |
| 610 | 1 | |a ion implantation | |
| 610 | 1 | |a плазма | |
| 610 | 1 | |a ионные пучки | |
| 610 | 1 | |a ионная имплантация | |
| 701 | 1 | |a Ryabchikov |b A. I. |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |c physicist |f 1950- |g Aleksandr Ilyich |3 (RuTPU)RU\TPU\pers\30912 | |
| 701 | 1 | |a Shevelev |b A. E. |c Physicist |c Engineer of Tomsk Polytechnic University |f 1990- |g Aleksey Eduardovich |3 (RuTPU)RU\TPU\pers\36832 | |
| 701 | 1 | |a Sivin |b D. O. |c physicist |c Senior researcher of Tomsk Polytechnic University, Candidate of technical sciences |f 1978- |g Denis Olegovich |3 (RuTPU)RU\TPU\pers\34240 | |
| 701 | 1 | |a Dektyarev |b S. V. |c physicist |c design engineer of Tomsk Polytechnic University |f 1957- |g Sergey Valentinovich |3 (RuTPU)RU\TPU\pers\35672 | |
| 701 | 1 | |a Korneva |b O. S. |c physicist |c engineer of Tomsk Polytechnic University |f 1988- |g Olga Sergeevna |3 (RuTPU)RU\TPU\pers\37178 |9 20156 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа ядерных технологий |b Научная лаборатория высокоинтенсивной имплантации ионов |3 (RuTPU)RU\TPU\col\23698 |
| 801 | 2 | |a RU |b 63413507 |c 20220221 |g RCR | |
| 856 | 4 | 0 | |u https://doi.org/10.1007/s11182-021-02224-6 |
| 942 | |c CF | ||