Features of the Luminescence Spectra of ZnSe · O Crystals in Band Anticrossing Theory; Semiconductors; Vol. 55, iss. 5
| Parent link: | Semiconductors Vol. 55, iss. 5.— 2022.— [P. 531-537] |
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| Հիմնական հեղինակ: | |
| Համատեղ հեղինակ: | |
| Այլ հեղինակներ: | , |
| Ամփոփում: | Title screen The effect of the structural features of self-activated zinc selenide and crystals with activators on the emission spectra is investigated in band anticrossing theory. Numerous contradictory published data make it difficult to understand this issue. Band anticrossing theory in its current statement requires taking into account the effect of the isoelectronic oxygen impurity, which inevitably exists in the ZnSe lattice, on the band structure. The development of methods for calculating the equilibrium of intrinsic point defects suggests the use of these data in analyzing the optical properties of AII–BIV compounds, including zinc selenide. The study is aimed at examining the features and nature of individual luminescence bands widely used to obtain information about crystal quality. The photoluminescence, cathodoluminescence, and pulsed luminescence spectra, as well as the excitation and stimulated emission spectra of ZnSe are investigated with the use of these features in a single context, taking into account the noted features. The stable states of crystals with stacking faults upon embedding activators or a background copper impurity are established. The data are of interest for the diagnostics of crystals applicable in lasers. Режим доступа: по договору с организацией-держателем ресурса |
| Լեզու: | անգլերեն |
| Հրապարակվել է: |
2022
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| Խորագրեր: | |
| Առցանց հասանելիություն: | https://doi.org/10.1134/S1063782621050110 |
| Ձևաչափ: | Էլեկտրոնային Գրքի գլուխ |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=667024 |
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| 200 | 1 | |a Features of the Luminescence Spectra of ZnSe · O Crystals in Band Anticrossing Theory |f V. I. Oleshko, S. S. Vil'chinskaya (Vilchinskaya), N. K. Morozova | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 18 tit.] | ||
| 330 | |a The effect of the structural features of self-activated zinc selenide and crystals with activators on the emission spectra is investigated in band anticrossing theory. Numerous contradictory published data make it difficult to understand this issue. Band anticrossing theory in its current statement requires taking into account the effect of the isoelectronic oxygen impurity, which inevitably exists in the ZnSe lattice, on the band structure. The development of methods for calculating the equilibrium of intrinsic point defects suggests the use of these data in analyzing the optical properties of AII–BIV compounds, including zinc selenide. The study is aimed at examining the features and nature of individual luminescence bands widely used to obtain information about crystal quality. The photoluminescence, cathodoluminescence, and pulsed luminescence spectra, as well as the excitation and stimulated emission spectra of ZnSe are investigated with the use of these features in a single context, taking into account the noted features. The stable states of crystals with stacking faults upon embedding activators or a background copper impurity are established. The data are of interest for the diagnostics of crystals applicable in lasers. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Semiconductors | ||
| 463 | |t Vol. 55, iss. 5 |v [P. 531-537] |d 2022 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a isoelectronic centers | |
| 610 | 1 | |a activators | |
| 610 | 1 | |a pulsed cathodoluminescence | |
| 610 | 1 | |a stimulated luminescence | |
| 610 | 1 | |a complex | |
| 610 | 1 | |a bound exciton | |
| 610 | 1 | |a stacking fault | |
| 610 | 1 | |a multiband | |
| 610 | 1 | |a изоэлектронность | |
| 610 | 1 | |a активаторы | |
| 610 | 1 | |a импульсная катодолюминесценция | |
| 610 | 1 | |a экситоны | |
| 700 | 1 | |a Oleshko |b V. I. |c specialist in the field of lightning engineering |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1948- |g Vladimir Ivanovich |3 (RuTPU)RU\TPU\pers\33783 |9 17381 | |
| 701 | 1 | |a Vil'chinskaya (Vilchinskaya) |b S. S. |c specialist in the field of laser and light technology |c associate Professor of Tomsk Polytechnic University, candidate of physico-mathematical Sciences |f 1976- |g Svetlana Sergeevna |3 (RuTPU)RU\TPU\pers\33905 |9 17478 | |
| 701 | 1 | |a Morozova |b N. K. |g Nataljya Konstantinovna | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа новых производственных технологий |b Отделение материаловедения |3 (RuTPU)RU\TPU\col\23508 |
| 801 | 2 | |a RU |b 63413507 |c 20220215 |g RCR | |
| 856 | 4 | |u https://doi.org/10.1134/S1063782621050110 | |
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