Conceptual Design of Experimental Facility for Large-Diameter NTD-Si at the IRT-T Reactor; Atom Indonesia; Vol. 47, iss. 1

書目詳細資料
Parent link:Atom Indonesia
Vol. 47, iss. 1.— 2021.— [P. 39-44]
Corporate Authors: Национальный исследовательский Томский политехнический университет Инженерная школа ядерных технологий Отделение ядерно-топливного цикла, Национальный исследовательский Томский политехнический университет Инженерная школа ядерных технологий
其他作者: Lebedev I. I. Ivan Igorevich, Zolotykh D. E. Daniil Evgenjevich, Naymushin A. G. Artem Georgievich, Smolnikov N. V. Nikita Viktorovich, Anikin M. N. Mikhail Nikolaevich, Varlachev V. A. Valery Aleksandrovich
總結:Title screen
The IRT-T reactor has been conducting research in the field of irradiation of ingots of single-crystal semiconductor materials since 1987. The article describes the existing silicon doping facility. The results of studies on the possibility of creating an additional irradiation channel for neutron-transmutation doping of silicon are presented. It is shown that the use of a graphite reflector and a thermal neutron filter based on boron makes it possible to achieve non-uniformity of irradiation up to 5 %. The principal possibility of irradiating single-crystal silicon ingots with a diameter of up to 203 mm and a length of up to 500 mm is shown. The questions of optimizing the configuration of the core and the regime of reactors operation for increasing the neutron flux in the irradiation channels are discussed. In addition, applying the facility to produce base materials for neutron dosimeter in neutron capture therapy studies is proposed.
Режим доступа: по договору с организацией-держателем ресурса
語言:英语
出版: 2021
主題:
在線閱讀:https://doi.org/10.17146/aij.2021.1005
格式: 電子 Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=666455

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