The effect of MoO3 interlayer on electro-physical characteristics of the perovskite solar cells

গ্রন্থ-পঞ্জীর বিবরন
Parent link:Synthetic Metals
Vol. 281.— 2021.— [116903, 7 p.]
সংস্থা লেখক: Национальный исследовательский Томский политехнический университет Инженерная школа новых производственных технологий Отделение материаловедения
অন্যান্য লেখক: Zeinidenov A. K. Asylbek Kalkenovich, Mukametkali T. Toktarbek, Iljyasov B. S. Boris Salmenovich, Aimukhanov A. K. Aytbek Kalievich, Valiev D. T. Damir Talgatovich
সংক্ষিপ্ত:Title screen
This report shows that sequentially deposited CuPc and MoOx films are an effective hole-transport layer (HTL) for perovskite solar cells (PSCs). PSCs with only CuPc hole-transport layer have a low power conversion efficiency (PCE) of 3.51%, which mostly due to a poor fill factor (FF) of 29.4%. The incorporation of the MoOx interlayer between the CuPc layer and the anode (Ag) significantly boosted device FF and PCE up to 63.2% and 8.12%, respectively. The analysis of the impedance spectra of PSCs indicates that the MoOx interlayer reduces HTL resistance and increases the recombination resistance at the perovskite/HTL interface, which increases an effective charge carrier lifetime. Moreover, MoOx electric transport properties depends on the stoichiometry of the crystal structure, which can be varied by tuning vacuum level during the thermal sputtering of MoOx layers. PSCs based on the MoOx layer deposited at low vacuum (10-2 Pa) have reached PCE of 8.12% owing to the optimization of the interlayer energy levels and electric transport properties of MoOx films. In this work, we have developed the double hole-transport layer (HTL) for PSCs, which can prevent perovskite degradation on perovskite/HTL interface and hinder a severe charge recombination.
Режим доступа: по договору с организацией-держателем ресурса
প্রকাশিত: 2021
বিষয়গুলি:
অনলাইন ব্যবহার করুন:https://doi.org/10.1016/j.synthmet.2021.116903
বিন্যাস: বৈদ্যুতিক গ্রন্থের অধ্যায়
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=666166

MARC

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200 1 |a The effect of MoO3 interlayer on electro-physical characteristics of the perovskite solar cells  |f A. K. Zeinidenov, T. Mukametkali, B. S. Iljyasov [et al.] 
203 |a Text  |c electronic 
300 |a Title screen 
320 |a [References: 38 tit.] 
330 |a This report shows that sequentially deposited CuPc and MoOx films are an effective hole-transport layer (HTL) for perovskite solar cells (PSCs). PSCs with only CuPc hole-transport layer have a low power conversion efficiency (PCE) of 3.51%, which mostly due to a poor fill factor (FF) of 29.4%. The incorporation of the MoOx interlayer between the CuPc layer and the anode (Ag) significantly boosted device FF and PCE up to 63.2% and 8.12%, respectively. The analysis of the impedance spectra of PSCs indicates that the MoOx interlayer reduces HTL resistance and increases the recombination resistance at the perovskite/HTL interface, which increases an effective charge carrier lifetime. Moreover, MoOx electric transport properties depends on the stoichiometry of the crystal structure, which can be varied by tuning vacuum level during the thermal sputtering of MoOx layers. PSCs based on the MoOx layer deposited at low vacuum (10-2 Pa) have reached PCE of 8.12% owing to the optimization of the interlayer energy levels and electric transport properties of MoOx films. In this work, we have developed the double hole-transport layer (HTL) for PSCs, which can prevent perovskite degradation on perovskite/HTL interface and hinder a severe charge recombination. 
333 |a Режим доступа: по договору с организацией-держателем ресурса 
461 |t Synthetic Metals 
463 |t Vol. 281  |v [116903, 7 p.]  |d 2021 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
610 1 |a perovskite solar cells 
610 1 |a MoOx 
610 1 |a hole transport layers 
610 1 |a copper phthalocyanine 
610 1 |a V-I characteristics 
610 1 |a impedance spectroscopy 
610 1 |a солнечные элементы 
610 1 |a слои 
610 1 |a фталоцианин меди 
610 1 |a спектроскопия 
610 1 |a электрофизические характеристики 
701 1 |a Zeinidenov  |b A. K.  |g Asylbek Kalkenovich 
701 1 |a Mukametkali  |b T.  |g Toktarbek 
701 1 |a Iljyasov  |b B. S.  |g Boris Salmenovich 
701 1 |a Aimukhanov  |b A. K.  |g Aytbek Kalievich 
701 1 |a Valiev  |b D. T.  |c specialist in the field of material science  |c Associate Professor of Tomsk Polytechnic University, Candidate of Physical and Mathematical Sciences  |f 1987-  |g Damir Talgatovich  |3 (RuTPU)RU\TPU\pers\33772  |9 17370 
712 0 2 |a Национальный исследовательский Томский политехнический университет  |b Инженерная школа новых производственных технологий  |b Отделение материаловедения  |3 (RuTPU)RU\TPU\col\23508 
801 2 |a RU  |b 63413507  |c 20211209  |g RCR 
856 4 |u https://doi.org/10.1016/j.synthmet.2021.116903 
942 |c CF