Aluminum Nitride Doped with Transition Metal Group Atoms as a Material for Spintronics

Aluminum Nitride Doped with Transition Metal Group Atoms as a Material for Spintronics

Detalles Bibliográficos
Parent link:Russian Physics Journal
Vol. 63, iss. 11.— 2021.— [P. 2013-2024]
Autor Corporativo: Национальный исследовательский Томский политехнический университет Школа базовой инженерной подготовки Отделение естественных наук
Otros Autores: Khludkov S. S. Stanislav Stepanovich, Prudaev I. A. Ilya Anatolievich, Root L. O. Lyudmila Olegovna, Tolbanov O. P. Oleg Petrovich, Ivonin I. V. Ivan Varfolomeevich
Sumario:Title screen
The overview of scientific literature on the electric and magnetic properties of AlN doped with transition metal group atoms is presented. The review is based on the literature sources published mainly in the last 10 years. The doping was carried out by various methods: during the material growth (molecular beam epitaxy, magnetron sputtering, discharge techniques) or by implantation into the grown material. The presented theoretical and experimental data show that AlN doped with transition metal group atoms has ferromagnetic properties at temperatures above room temperature and is a promising material for spintronics.
Режим доступа: по договору с организацией-держателем ресурса
Publicado: 2021
Materias:
электронный ресурс
труды учёных ТПУ
aluminum nitride
magnetic properties
Curie temperature
Acceso en línea:https://doi.org/10.1007/s11182-021-02264-y
Formato: Electrónico Capítulo de libro
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=666162

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