Effect of irradiation with continuous 28 MeV He2+ ion beam and short-pulsed 200 keV C+ ion beam on optical properties of multilayer Al-Si-N coatings; Radiation Effects and Defects in Solids; Vol. 176, iss. 3-4

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Parent link:	Radiation Effects and Defects in Solids Vol. 176, iss. 3-4.— 2021.— [P. 308-319]
Enti autori:	Национальный исследовательский Томский политехнический университет Исследовательская школа физики высокоэнергетических процессов, Национальный исследовательский Томский политехнический университет Инженерная школа ядерных технологий Научная лаборатория радиоактивных веществ и технологий, Национальный исследовательский Томский политехнический университет Инженерная школа новых производственных технологий Научно-производственная лаборатория "Импульсно-пучковых, электроразрядных и плазменных технологий"
Altri autori:	Konusov F. V. Fedor Valerievich, Pavlov S. K. Sergey Konstantinovich, Lauk A. L. Aleksandr Lukyanovich, Sokhoreva V. V. Valentina Viktorovna, Gadirov R. M. Ruslan Mukhamedzhanovich, Tarbokov V. A. Vladislav Aleksandrovich, Remnev G. E. Gennady Efimovich
Riassunto:	Title screen The article reports on radiation defect formation parameters and radiation resistance of multilayer coatings from thin layers of aluminum and silicon nitrides deposited on sodium-calcium-silicate glass and monocrystalline silicon substrates by reactive magnetron sputtering. The samples were irradiated with helium ions of 28 MeV on a cyclotron and carbon ions 200 keV on an accelerator in the mode of short-pulse implantation. The characteristics of local absorption and luminescence centers before and after irradiation and their probable nature were determined. The optical centers had been identified as point intrinsic defects of a growth and radiation nature. The accumulation of radiation defects in layers of amorphous silicon nitride a-Si3N4 prevailed over the accumulation in crystalline c-AlN layers due to the diffusion of defects in amorphous layers and the formation of secondary defects in them. Changes in optical properties led to the conclusion about the high radiation resistance of the coatings. The main reasons for the resistance of coatings to ion irradiation were the high concentration of growth defects, their strong interaction and the wide band gap of the nitrides. Coatings deposited on silicon substrates had a higher radiation resistance compared to the same coatings deposited on glass substrates. Режим доступа: по договору с организацией-держателем ресурса
Lingua:	inglese
Pubblicazione:	2021
Soggetti:	электронный ресурс труды учёных ТПУ radiation defect absorption Al-Si-N filmion ion irradiation радиационные дефекты поглощение ионное облучение оптические свойства многослойные покрытия
Accesso online:	https://doi.org/10.1080/10420150.2020.1832489
Natura:	Elettronico Capitolo di libro
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=665317