Effect of irradiation with continuous 28 MeV He2+ ion beam and short-pulsed 200 keV C+ ion beam on optical properties of multilayer Al-Si-N coatings; Radiation Effects and Defects in Solids; Vol. 176, iss. 3-4
| Parent link: | Radiation Effects and Defects in Solids Vol. 176, iss. 3-4.— 2021.— [P. 308-319] |
|---|---|
| সংস্থা লেখক: | , , |
| অন্যান্য লেখক: | , , , , , , |
| সংক্ষিপ্ত: | Title screen The article reports on radiation defect formation parameters and radiation resistance of multilayer coatings from thin layers of aluminum and silicon nitrides deposited on sodium-calcium-silicate glass and monocrystalline silicon substrates by reactive magnetron sputtering. The samples were irradiated with helium ions of 28 MeV on a cyclotron and carbon ions 200 keV on an accelerator in the mode of short-pulse implantation. The characteristics of local absorption and luminescence centers before and after irradiation and their probable nature were determined. The optical centers had been identified as point intrinsic defects of a growth and radiation nature. The accumulation of radiation defects in layers of amorphous silicon nitride a-Si3N4 prevailed over the accumulation in crystalline c-AlN layers due to the diffusion of defects in amorphous layers and the formation of secondary defects in them. Changes in optical properties led to the conclusion about the high radiation resistance of the coatings. The main reasons for the resistance of coatings to ion irradiation were the high concentration of growth defects, their strong interaction and the wide band gap of the nitrides. Coatings deposited on silicon substrates had a higher radiation resistance compared to the same coatings deposited on glass substrates. Режим доступа: по договору с организацией-держателем ресурса |
| ভাষা: | ইংরেজি |
| প্রকাশিত: |
2021
|
| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | https://doi.org/10.1080/10420150.2020.1832489 |
| বিন্যাস: | বৈদ্যুতিক গ্রন্থের অধ্যায় |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=665317 |
MARC
| LEADER | 00000naa0a2200000 4500 | ||
|---|---|---|---|
| 001 | 665317 | ||
| 005 | 20250129163738.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\36516 | ||
| 035 | |a RU\TPU\network\28513 | ||
| 090 | |a 665317 | ||
| 100 | |a 20210913d2021 k||y0rusy50 ba | ||
| 101 | 0 | |a eng | |
| 102 | |a GB | ||
| 135 | |a drcn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a Effect of irradiation with continuous 28 MeV He2+ ion beam and short-pulsed 200 keV C+ ion beam on optical properties of multilayer Al-Si-N coatings |f F. V. Konusov, S. K. Pavlov, A. L. Lauk [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 36 tit.] | ||
| 330 | |a The article reports on radiation defect formation parameters and radiation resistance of multilayer coatings from thin layers of aluminum and silicon nitrides deposited on sodium-calcium-silicate glass and monocrystalline silicon substrates by reactive magnetron sputtering. The samples were irradiated with helium ions of 28 MeV on a cyclotron and carbon ions 200 keV on an accelerator in the mode of short-pulse implantation. The characteristics of local absorption and luminescence centers before and after irradiation and their probable nature were determined. The optical centers had been identified as point intrinsic defects of a growth and radiation nature. The accumulation of radiation defects in layers of amorphous silicon nitride a-Si3N4 prevailed over the accumulation in crystalline c-AlN layers due to the diffusion of defects in amorphous layers and the formation of secondary defects in them. Changes in optical properties led to the conclusion about the high radiation resistance of the coatings. The main reasons for the resistance of coatings to ion irradiation were the high concentration of growth defects, their strong interaction and the wide band gap of the nitrides. Coatings deposited on silicon substrates had a higher radiation resistance compared to the same coatings deposited on glass substrates. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Radiation Effects and Defects in Solids | ||
| 463 | |t Vol. 176, iss. 3-4 |v [P. 308-319] |d 2021 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a radiation defect | |
| 610 | 1 | |a absorption | |
| 610 | 1 | |a Al-Si-N filmion | |
| 610 | 1 | |a ion irradiation | |
| 610 | 1 | |a радиационные дефекты | |
| 610 | 1 | |a поглощение | |
| 610 | 1 | |a ионное облучение | |
| 610 | 1 | |a оптические свойства | |
| 610 | 1 | |a многослойные покрытия | |
| 701 | 1 | |a Konusov |b F. V. |c physicist |c Lead Engineer of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1958- |g Fedor Valerievich |3 (RuTPU)RU\TPU\pers\32570 |9 16491 | |
| 701 | 1 | |a Pavlov |b S. K. |c physicist |c Engineer of Tomsk Polytechnic University |f 1990- |g Sergey Konstantinovich |3 (RuTPU)RU\TPU\pers\32875 | |
| 701 | 1 | |a Lauk |b A. L. |c Physicist |c Leading engineer of Tomsk Polytechnic University |f 1957- |g Aleksandr Lukyanovich |3 (RuTPU)RU\TPU\pers\37675 | |
| 701 | 1 | |a Sokhoreva |b V. V. |c physicist |c Senior researcher of Tomsk Polytechnic University |f 1944- |g Valentina Viktorovna |3 (RuTPU)RU\TPU\pers\31213 |9 15409 | |
| 701 | 1 | |a Gadirov |b R. M. |g Ruslan Mukhamedzhanovich | |
| 701 | 1 | |a Tarbokov |b V. A. |c specialist in the field of material science |c Leading engineer of Tomsk Polytechnic University, Candidate of technical sciences |f 1969- |g Vladislav Aleksandrovich |3 (RuTPU)RU\TPU\pers\41878 | |
| 701 | 1 | |a Remnev |b G. E. |c physicist |c Professor of Tomsk Polytechnic University, Doctor of technical sciences |f 1948- |g Gennady Efimovich |3 (RuTPU)RU\TPU\pers\31500 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Исследовательская школа физики высокоэнергетических процессов |c (2017- ) |3 (RuTPU)RU\TPU\col\23551 |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа ядерных технологий |b Научная лаборатория радиоактивных веществ и технологий |3 (RuTPU)RU\TPU\col\25818 |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа новых производственных технологий |b Научно-производственная лаборатория "Импульсно-пучковых, электроразрядных и плазменных технологий" |3 (RuTPU)RU\TPU\col\23502 |
| 801 | 2 | |a RU |b 63413507 |c 20211210 |g RCR | |
| 856 | 4 | |u https://doi.org/10.1080/10420150.2020.1832489 | |
| 942 | |c CF | ||