Kinetic properties of infrared and visible luminescence induced by electron beam in CsI:Tl crystal; Journal of Luminescence; Vol. 223
| Parent link: | Journal of Luminescence Vol. 223.— 2020.— [117183, 6 p.] |
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| Résumé: | Title screen Presented are the results of comparative study of the decay kinetics for luminescence in the visible (350 [-:]700 nm) and infrared (1000[-:]1900 nm) spectral regions, which is excited in CsI:Tl crystals by a pulsed electron beam (Еm=250 keV, t1/2=15 ns, j=8 mJ/cm2). The infrared luminescence is assumed to be caused by radiative transition from the excited 62P3/2 state into the ground 62P1/2 state of Tl0 center. The decay kinetics of this luminescence at temperatures within 77[-:]450 К range is found to have two pronounced stages. One of them is exponential with a time constant characteristic for the given temperature and independent of Tl concentration within 0.018[-:]0.43 mass% range. The other stage has the same decay kinetics as that of the visible luminescence measured under the same conditions. In terms Tl0-Vk recombination giving rise to Tl-perturbed excitons, the visible luminescence arise due to disintegration of [(Tl)*,Vk] complexes, where Tl0 center has the populated [psi] sub-level of the 62P3/2 excited state. The exponential nature and rather long duration of the visible luminescence decay ([tau]= 700 ns) at room temperature are determined by the lifetime of Tl0 center in the excited metastable state. Режим доступа: по договору с организацией-держателем ресурса |
| Langue: | anglais |
| Publié: |
2020
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| Sujets: | |
| Accès en ligne: | https://doi.org/10.1016/j.jlumin.2020.117183 |
| Format: | Électronique Chapitre de livre |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=665252 |
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| 200 | 1 | |a Kinetic properties of infrared and visible luminescence induced by electron beam in CsI:Tl crystal |f V. Yu. Yakovlev, L. N. Trefilova | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 25 tit.] | ||
| 330 | |a Presented are the results of comparative study of the decay kinetics for luminescence in the visible (350 [-:]700 nm) and infrared (1000[-:]1900 nm) spectral regions, which is excited in CsI:Tl crystals by a pulsed electron beam (Еm=250 keV, t1/2=15 ns, j=8 mJ/cm2). The infrared luminescence is assumed to be caused by radiative transition from the excited 62P3/2 state into the ground 62P1/2 state of Tl0 center. The decay kinetics of this luminescence at temperatures within 77[-:]450 К range is found to have two pronounced stages. One of them is exponential with a time constant characteristic for the given temperature and independent of Tl concentration within 0.018[-:]0.43 mass% range. The other stage has the same decay kinetics as that of the visible luminescence measured under the same conditions. In terms Tl0-Vk recombination giving rise to Tl-perturbed excitons, the visible luminescence arise due to disintegration of [(Tl)*,Vk] complexes, where Tl0 center has the populated [psi] sub-level of the 62P3/2 excited state. The exponential nature and rather long duration of the visible luminescence decay ([tau]= 700 ns) at room temperature are determined by the lifetime of Tl0 center in the excited metastable state. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Journal of Luminescence | ||
| 463 | |t Vol. 223 |v [117183, 6 p.] |d 2020 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a кинетические свойства | |
| 610 | 1 | |a люминесценция | |
| 610 | 1 | |a электронные пучки | |
| 610 | 1 | |a кристаллы | |
| 610 | 1 | |a спектры | |
| 610 | 1 | |a время жизни | |
| 610 | 1 | |a кинетика затухания | |
| 700 | 1 | |a Yakovlev |b V. Yu. |c specialist in the field of lightning engineering |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1949- |g Viktor Yurjevich |3 (RuTPU)RU\TPU\pers\35728 |9 18886 | |
| 701 | 1 | |a Trefilova |b L. N. |g Larisa Nikolaevna | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа новых производственных технологий |b Отделение материаловедения |3 (RuTPU)RU\TPU\col\23508 |
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