Twisted graphene in graphite: Impact on surface potential and chemical stability; Carbon; Vol. 176

Bibliografiske detaljer
Parent link:Carbon
Vol. 176.— 2021.— [P. 431-439]
Corporate Authors: Национальный исследовательский Томский политехнический университет Исследовательская школа химических и биомедицинских технологий, Национальный исследовательский Томский политехнический университет Исследовательская школа физики высокоэнергетических процессов
Andre forfattere: Tran Tuan Hoang, Rodriguez (Rodriges) Contreras R. D. Raul David, Salerno M. Marco, Matkovic A. Aleksandar, Teichert Ch. Christian, Sheremet E. S. Evgeniya Sergeevna
Summary:Title screen
Highly-oriented pyrolytic graphite (HOPG), i.e., the 3D stack of sp2-hybridized carbon sheets, is an attractive material thanks to its high electrical conductivity, chemical inertness, thermal stability, atomic-scale flatness, and ease of exfoliation. Despite an apparently ideal and uniform material, freshly cleaved HOPG shows domains in Kelvin probe force microscopy (KPFM) with surface potential contrast over 30 mV. We systematically investigated these domains using an integrated approach, including time-dependent KPFM and hyperspectral Raman imaging. The observed time-evolving domains are attributed to locally different hydrocarbon adsorption from the environment, driven by structural defects likely related to rotational mismatch, i.e., twisted layers. These defects affect the interlayer coupling between topmost graphene and the underlying layers. Our hypothesis was supported by Raman spectroscopy results, showing domains with G peak shifts and 2D line shape compatible with bilayer graphene. We attribute the selective sensitivity of our Raman spectroscopy results to the top graphene layers as resonances due to van Hove singularities. Our results show that the chemical and electrical properties of HOPG are far more complex than what is generally believed due to the broken symmetry at the top surface, giving rise to graphene bilayer-like behavior.
Режим доступа: по договору с организацией-держателем ресурса
Sprog:engelsk
Udgivet: 2021
Fag:
Online adgang:https://doi.org/10.1016/j.carbon.2021.01.152
Format: Electronisk Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=665209

MARC

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200 0 |a Twisted graphene in graphite: Impact on surface potential and chemical stability  |f Tran Tuan Hoang, R. D. Rodriguez (Rodriges) Contreras, M. Salerno [et al.] 
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300 |a Title screen 
320 |a [References: 68 tit.] 
330 |a Highly-oriented pyrolytic graphite (HOPG), i.e., the 3D stack of sp2-hybridized carbon sheets, is an attractive material thanks to its high electrical conductivity, chemical inertness, thermal stability, atomic-scale flatness, and ease of exfoliation. Despite an apparently ideal and uniform material, freshly cleaved HOPG shows domains in Kelvin probe force microscopy (KPFM) with surface potential contrast over 30 mV. We systematically investigated these domains using an integrated approach, including time-dependent KPFM and hyperspectral Raman imaging. The observed time-evolving domains are attributed to locally different hydrocarbon adsorption from the environment, driven by structural defects likely related to rotational mismatch, i.e., twisted layers. These defects affect the interlayer coupling between topmost graphene and the underlying layers. Our hypothesis was supported by Raman spectroscopy results, showing domains with G peak shifts and 2D line shape compatible with bilayer graphene. We attribute the selective sensitivity of our Raman spectroscopy results to the top graphene layers as resonances due to van Hove singularities. Our results show that the chemical and electrical properties of HOPG are far more complex than what is generally believed due to the broken symmetry at the top surface, giving rise to graphene bilayer-like behavior. 
333 |a Режим доступа: по договору с организацией-держателем ресурса 
461 |t Carbon 
463 |t Vol. 176  |v [P. 431-439]  |d 2021 
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701 0 |a Tran Tuan Hoang  |c specialist in the field of nuclear technologies  |c engineer of Tomsk Polytechnic University  |f 1993-  |3 (RuTPU)RU\TPU\pers\47572 
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701 1 |a Teichert  |b Ch.  |g Christian 
701 1 |a Sheremet  |b E. S.  |c physicist  |c Professor of Tomsk Polytechnic University  |f 1988-  |g Evgeniya Sergeevna  |3 (RuTPU)RU\TPU\pers\40027  |9 21197 
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