Plasma Diagnostics in Reactive High-Power Impulse Magnetron Sputtering System Working in Ar + H2S Gas Mixture; Coatings; Vol. 10, iss. 3

Detalles Bibliográficos
Parent link:Coatings
Vol. 10, iss. 3.— 2020.— [246, 16 p.]
Otros Autores: Hubicka Z., Cada M. Martin, Kapran A. Anna, Olejnícek J. Jiri, Ksírová P., Zanaska M., Adamek P., Tichy M. Milan
Sumario:Title screen
A reactive high-power impulse magnetron sputtering system (HiPIMS) working in Ar + H2S gas mixture was investigated as a source for the deposition of iron sulfide thin films. As a sputtering material, a pure Fe target was used. Plasma parameters in this system were investigated by a time-resolved Langmuir probe, radio-frequency (RF) ion flux probe, quartz crystal monitor modified for measurement of the ionized fraction of depositing particles, and by optical emission spectroscopy. A wide range of mass flow rates of reactive gas H2S was used for the investigation of the deposition process. It was found that the deposition rate of iron sulfide thin films is not influenced by the flow rate of H2S reactive gas fed into the magnetron discharge although the target is covered by iron sulfide compound. The ionized fraction of depositing particles decreases from r ˜ 40% to r ˜ 20% as the flow rate of H2S, QH2S, changes from 0 to 19 sccm at the gas pressure around p ˜ 1 Pa in the reactor chamber. The electron concentration ne measured by the Langmuir probe at the position of the substrate decreases over this change of QH2S from 1018 down to 1017 m-3
Lenguaje:inglés
Publicado: 2020
Materias:
Acceso en línea:https://doi.org/10.3390/coatings10030246
Formato: Electrónico Capítulo de libro
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=664997

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200 1 |a Plasma Diagnostics in Reactive High-Power Impulse Magnetron Sputtering System Working in Ar + H2S Gas Mixture  |f Z. Hubicka, M. Cada, A. Kapran [et al.] 
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300 |a Title screen 
320 |a [References: 57 tit.] 
330 |a A reactive high-power impulse magnetron sputtering system (HiPIMS) working in Ar + H2S gas mixture was investigated as a source for the deposition of iron sulfide thin films. As a sputtering material, a pure Fe target was used. Plasma parameters in this system were investigated by a time-resolved Langmuir probe, radio-frequency (RF) ion flux probe, quartz crystal monitor modified for measurement of the ionized fraction of depositing particles, and by optical emission spectroscopy. A wide range of mass flow rates of reactive gas H2S was used for the investigation of the deposition process. It was found that the deposition rate of iron sulfide thin films is not influenced by the flow rate of H2S reactive gas fed into the magnetron discharge although the target is covered by iron sulfide compound. The ionized fraction of depositing particles decreases from r ˜ 40% to r ˜ 20% as the flow rate of H2S, QH2S, changes from 0 to 19 sccm at the gas pressure around p ˜ 1 Pa in the reactor chamber. The electron concentration ne measured by the Langmuir probe at the position of the substrate decreases over this change of QH2S from 1018 down to 1017 m-3 
461 |t Coatings 
463 |t Vol. 10, iss. 3  |v [246, 16 p.]  |d 2020 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
610 1 |a HiPIMS 
610 1 |a Langmuir probe 
610 1 |a optical emission spectrometry 
610 1 |a time-resolved probe measurements 
610 1 |a H2S 
610 1 |a electron density 
610 1 |a electron temperature 
610 1 |a ionization fraction 
610 1 |a SEM 
610 1 |a XRD 
701 1 |a Hubicka  |b Z. 
701 1 |a Cada  |b M.  |g Martin 
701 1 |a Kapran  |b A.  |g Anna 
701 1 |a Olejnícek  |b J.  |g Jiri 
701 1 |a Ksírová  |b P. 
701 1 |a Zanaska  |b M. 
701 1 |a Adamek  |b P. 
701 1 |a Tichy  |b M.  |c chemist  |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences  |f 1947-  |g Milan  |3 (RuTPU)RU\TPU\pers\35771 
801 2 |a RU  |b 63413507  |c 20210617  |g RCR 
856 4 |u https://doi.org/10.3390/coatings10030246 
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