All-inkjet-printed high-performance flexible MoS2 and MoS2-reduced graphene oxide field-effect transistors; Journal of Materials Science; Vol. 55, iss. 27

All-inkjet-printed high-performance flexible MoS2 and MoS2-reduced graphene oxide field-effect transistors; Journal of Materials Science; Vol. 55, iss. 27

Bibliographische Detailangaben
Parent link:Journal of Materials Science
Vol. 55, iss. 27.— 2020.— [P. 12969-12979]
Körperschaften: Национальный исследовательский Томский политехнический университет Исследовательская школа физики высокоэнергетических процессов, Национальный исследовательский Томский политехнический университет Исследовательская школа химических и биомедицинских технологий
Weitere Verfasser: Jiang Zhi, Xiao Kuan, Chen Jinju, Wang Yan, Xu Zhaoquan, Sowade E. Enrico, Baumann R. R. Reinhard, Sheremet E. S. Evgeniya Sergeevna, Rodriguez (Rodriges) Contreras R. D. Raul David, Feng Zhesheng
Zusammenfassung:Title screen
Two-dimensional (2D) materials have been utilized to design flexible field-effect transistors (FETs) with promising performance. However, flexible FETs still face challenges with poor switching features and ultra-low drive current. In this paper, a facile and repeatable large-area integration process is presented for inkjet-printed FETs with 2D materials active channels and PI films as gate dielectrics. The MoS2 FETs reported here exhibit n-type channel feature with an outstanding average subthreshold swing of 75 mV/dec, an on-state/off-state current ratio of 104, and on-state current up to 10 ?A at a power supply voltage of 3.0 V. Besides, MoS2–rGO FETs also exhibit n-type semiconductor features with good electrical properties by the inkjet-printing technology.
Режим доступа: по договору с организацией-держателем ресурса
Sprache:Englisch
Veröffentlicht: 2020
Schlagworte:
электронный ресурс
труды учёных ТПУ
Online-Zugang:https://doi.org/10.1007/s10853-020-04891-1
Format: Elektronisch Buchkapitel
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=664755

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